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Field-Free Spin–Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-10-11 , DOI: 10.1021/acsami.9b13622
Baoshan Cui 1, 2 , Hao Wu 1 , Dong Li 3 , Seyed Armin Razavi 1 , Di Wu 1 , Kin L. Wong 1 , Meixia Chang 2 , Meizhen Gao 2 , Yalu Zuo 2 , Li Xi 2 , Kang L. Wang 1
Affiliation  

Current-induced spin–orbit torques (SOTs) enable efficient electrical manipulation of the magnetization in heterostructures with a perpendicular magnetic anisotropy through the Rashba effect or spin-Hall effect. However, in conventional SOT-based heterostructures, an in-plane bias magnetic field along the current direction is required for the deterministic switching. Here, we report that the field-free SOT switching can be achieved by introducing a wedged oxide interface between a heavy metal and a ferromagnet. The results demonstrate that the field-free SOT switching is determined by a current-induced perpendicular effective field (Hzeff) originating from the interfacial Rashba effect due to the lateral structural symmetry-breaking introduced by the wedged oxide layer. Furthermore, we show that the sign and magnitude of Hzeff exhibit a significant dependence on the interfacial oxygen content, which can be controlled by the inserted oxide thickness. Our findings provide a deeper insight into the field-free SOT switching by the interfacial Rashba effect.

中文翻译:

通过Rashba接口进行垂直磁化的无场自旋轨道转矩切换

电流感应的自旋轨道转矩(SOT)可以通过Rashba效应或自旋霍尔效应,以垂直磁各向异性对异质结构中的磁化进行有效的电操纵。但是,在传统的基于SOT的异质结构中,确定性切换需要沿电流方向的面内偏置磁场。在这里,我们报告可以通过在重金属和铁磁体之间引入楔形氧化物界面来实现无场SOT切换。结果表明,无场SOT开关由电流感应的垂直有效场(H z eff)源自楔形氧化物层引入的横向结构对称性破坏而引起的界面Rashba效应。此外,我们表明,H z eff的符号和大小对界面氧含量具有显着依赖性,这可以通过插入的氧化物厚度来控制。我们的发现为通过界面Rashba效应进行的无场SOT转换提供了更深入的了解。
更新日期:2019-10-12
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