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Carbon-nanoparticle-assisted growth of high quality bilayer WS2 by atmospheric pressure chemical vapor deposition
Nano Research ( IF 9.5 ) Pub Date : 2019-10-11 , DOI: 10.1007/s12274-019-2516-3
Jieyuan Liang , Lijie Zhang , Xiaoxiao Li , Baojun Pan , Tingyan Luo , Dayan Liu , Chao Zou , Nannan Liu , Yue Hu , Keqin Yang , Shaoming Huang

Two-dimensional (2D) WS2 offers great prospects for assembling next-generation optoelectronic and electronic devices due to its thickness-dependent optical and electronic properties. However, layer-number-controlled growth of WS2 is still a challenge up to now. This work presents controlled growth of bilayer WS2 triangular flakes by carbon-nanoparticle-assisted chemical vapor deposition (CVD) process. The growth mechanism is also proposed. In addition, the field effect transistors (FETs) based on monolayer and bilayer WS2 are also fabricated and investigated. The bilayer FET displays a mobility of 34 cm2·V-1·s-1, much higher than that of the monolayer FET. The high figures of merit make bilayer WS2 a promising candidate in high-performance electronics and optoelectronics.

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中文翻译:

碳纳米颗粒辅助生长高质量双层WS2个 通过大气压化学气相沉积

二维(2D)WS 2由于其与厚度有关的光学和电子特性,因此为组装下一代光电和电子设备提供了广阔的前景。但是,到目前为止,WS 2的层数控制增长仍然是一个挑战。这项工作提出了通过碳纳米粒子辅助化学气相沉积(CVD)工艺控制双层WS 2三角形薄片的生长。还提出了增长机制。另外,还制造并研究了基于单层和双层WS 2的场效应晶体管(FET)。双层FET的迁移率为34 cm 2 ·V -1 ·s -1,比单层FET高得多。高品质的优点使双层WS 2成为高性能电子和光电子领域的有前途的候选产品。

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更新日期:2019-10-11
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