The technologies of 3D vertical architecture have made a major breakthrough in establishing high-density memory structures. Combined with an array structure, a 3D high-density vertical resistive random access memory (VRRAM) cross-point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D-VRRAM arrays are designed. Two-layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross-point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications.

中文翻译：

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高密度VRRAM阵列的单个侧壁中的低功耗纳米丝ECM和VCM单元。

3D垂直架构技术在建立高密度存储结构方面取得了重大突破。结合阵列结构，证明了3D高密度垂直电阻式随机存取存储器（VRRAM）交叉点阵列可以有效地提高设备密度。尽管电化学迁移（ECM）电阻随机访问（RRAM）具有低功耗的优点，但由于灯丝膨胀和劣化，工作电压的稳定性仍需要进一步改善。在这项工作中，设计了3D-VRRAM阵列。构造了两层RRAM单元，其中一个惰性电极和一个有源侧壁电极在交叉点处堆叠在一起，其中VRRAM结构中的薄膜侧壁电极有利于限制导电细丝的膨胀。因此，可以同时分析通过不同机制切换的VRRAM结构中的顶部单元（Pt / ZnO / Pt）和底部单元（Ag / ZnO / Pt）。验证了Pt / ZnO / Pt单元中的氧空位细丝和Ag / ZnO / Pt单元中的Ag细丝。厚度为40 nm的侧壁电极将灯丝尺寸限制在纳米级，这证明了工作电压的稳定性。此外，Ag / ZnO / Pt ECM VRRAM的0.3 V工作电压证明了未来应用中VRRAM阵列低功耗的潜力。厚度为40 nm的侧壁电极将灯丝尺寸限制在纳米级，这证明了工作电压的稳定性。此外，Ag / ZnO / Pt ECM VRRAM的0.3 V工作电压证明了未来应用中VRRAM阵列低功耗的潜力。厚度为40 nm的侧壁电极将灯丝尺寸限制在纳米级，这证明了工作电压的稳定性。此外，Ag / ZnO / Pt ECM VRRAM的0.3 V工作电压证明了未来应用中VRRAM阵列低功耗的潜力。