当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Mechanical-Induced Polarization Switching in Relaxor Ferroelectric Single Crystals
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-10-17 , DOI: 10.1021/acsami.9b12301 Jihong Bian 1 , Yuting Wang 1 , Ren Zhu 2 , Lei Wang 1 , Bian Yang 1 , Jianwei Wang 1 , Dawei Zhang 3 , Congcong Xu 1 , Tao Li 4 , Dwight Viehland 5 , Yaodong Yang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-10-17 , DOI: 10.1021/acsami.9b12301 Jihong Bian 1 , Yuting Wang 1 , Ren Zhu 2 , Lei Wang 1 , Bian Yang 1 , Jianwei Wang 1 , Dawei Zhang 3 , Congcong Xu 1 , Tao Li 4 , Dwight Viehland 5 , Yaodong Yang 1
Affiliation
|
Control of coupling between electric and elastic orders in ferroelectric bulks is vital to understand their nature and enrich the multifunctionality of polarization manipulation applied in domain-based electronic devices such as ferroelectric memories and data storage ones. Herein, taking (1 – x%)Pb(Mg1/3Nb2/3)O3–x%PbTiO3 (PMN–x%PT, x = 32, 40) as the prototype, we demonstrate the less-explored mechanical switching in relaxor ferroelectric single crystals using scanning probe microscopy. Low mechanical forces can induce metastable and electrically erasable polarization reversal clearly from electrical-created bipolar domains around the 180° domain wall in monoclinic PMN–32%PT and inside the c+ domain in tetragonal PMN–40%PT. The mechanical switching evolutions show force/time dependence and time-force equivalence. The time-dependent mechanical switching behavior stems from the participation and contribution of polar nanoregions. Flexoelectricity and bulk Vegard strain effect can account for the mechanical switching but notably, the former in the two has very different origins. These investigations exhibit the possibility of mechanical switching as a tool to manipulate polarization states in ferroelectric bulks, and provide the potential of these crystals as substrates in mechanical polarization control of future thin-film devices.
中文翻译：
弛豫铁电单晶中的机械诱导极化转换
铁电体中电和弹性阶次之间的耦合控制对于了解它们的性质以及丰富应用于基于域的电子设备（如铁电存储器和数据存储设备）中的极化操作的多功能性至关重要。在此，取（1 – x％）Pb（Mg 1/3 Nb 2/3）O 3 – x％PbTiO 3（PMN– x％PT，x= 32，40）作为原型，我们使用扫描探针显微镜论证了弛豫铁电单晶中探索较少的机械转换。低机械力可以从单斜PMN–32％PT的180°畴壁周围和四边形PMN-40％PT的c +畴内部的电创建的双极畴中明显诱导亚稳态和电可擦除的极化反转。机械开关的演变表明力/时间的依赖性和时间-力的等效性。时间相关的机械开关行为源于极性纳米区域的参与和贡献。柔性电和整体Vegard应变效应可以解释机械转换，但值得注意的是，两者中的前者起源非常不同。
更新日期：2019-10-17
中文翻译：
弛豫铁电单晶中的机械诱导极化转换
铁电体中电和弹性阶次之间的耦合控制对于了解它们的性质以及丰富应用于基于域的电子设备（如铁电存储器和数据存储设备）中的极化操作的多功能性至关重要。在此，取（1 – x％）Pb（Mg 1/3 Nb 2/3）O 3 – x％PbTiO 3（PMN– x％PT，x= 32，40）作为原型，我们使用扫描探针显微镜论证了弛豫铁电单晶中探索较少的机械转换。低机械力可以从单斜PMN–32％PT的180°畴壁周围和四边形PMN-40％PT的c +畴内部的电创建的双极畴中明显诱导亚稳态和电可擦除的极化反转。机械开关的演变表明力/时间的依赖性和时间-力的等效性。时间相关的机械开关行为源于极性纳米区域的参与和贡献。柔性电和整体Vegard应变效应可以解释机械转换，但值得注意的是，两者中的前者起源非常不同。
京公网安备 11010802027423号