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Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-03-06 00:00:00 , DOI: 10.1021/acsami.7b16010
Wangying Xu 1 , Hao Li 2 , Jian-Bin Xu 2 , Lei Wang 2, 3
Affiliation  

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This work surveys the recent advances in solution-processed metal oxide TFTs, including n-type oxide semiconductors, oxide dielectrics, and p-type oxide semiconductors. We first deliver a review on the history and present status of metal oxide TFTs. Then, we present the recent progress in solution-processed n-type oxide semiconductors, with a special focus on low-temperature and large-area solution-based approaches as well as emerging nondisplay applications. Next, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-power electronics. We further discuss the recent advances in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw conclusions and outline the perspectives over the research field.

中文翻译:

固溶处理金属氧化物薄膜晶体管的最新进展

溶液处理的金属氧化物薄膜晶体管(TFT)被认为是未来大面积柔性电子产品最有前途的晶体管技术之一。这项工作调查了溶液处理的金属氧化物TFT的最新进展,包括n型氧化物半导体,氧化物电介质和p型氧化物半导体。我们首先对金属氧化物TFT的历史和现状进行回顾。然后,我们介绍了溶液处理的n型氧化物半导体的最新进展,特别关注基于低温和大面积溶液的方法以及新兴的非显示应用。接下来,我们将对用于低功率电子产品的最新溶液处理氧化物电介质进行详细分析。我们将进一步讨论基于溶液的p型氧化物半导体的最新进展,这将使高度期望的未来低成本大面积互补电路成为可能。最后,我们得出结论并概述研究领域的观点。
更新日期:2018-03-06
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