Vis–IR Wide-Spectrum Photodetector at Room Temperature Based on p–n Junction-Type GaAs1–xSbx/InAs Core–Shell Nanowire,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Vis–IR Wide-Spectrum Photodetector at Room Temperature Based on p–n Junction-Type GaAs1–xSbx/InAs Core–Shell Nanowire
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-10-14 , DOI: 10.1021/acsami.9b13559
Xinzhe Wang ₁ , Dong Pan ₂ , Yuxiang Han ₁ , Mei Sun ₁ , Jianhua Zhao ₂ , Qing Chen ₁

Affiliation

Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p–n heterojunction-type GaAs_1–xSb_x/InAs core–shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performance of the devices includes an ultralow dark current (32 pA at room temperature), a high response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I–V characteristics (the current rectification ratio being ∼178 in a voltage range of ±0.3 V). These results suggest that the GaAs_1–xSb_x/InAs core–shell nanowire devices are promising for applications in nanoelectronic devices, optoelectronic devices, and integrated optoelectronic devices.

中文翻译：

基于p–n结型GaAs _{1– x} Sb _x / InAs核-壳纳米线的室温下Vis–IR广谱光电探测器

在许多领域中，室温下的红外（IR）检测非常重要。覆盖红外范围的纳米级广谱光电探测器仍然很少见，尽管它们在许多应用中都需要，例如在集成光电设备中。在这里，我们报告一种基于p–n异质结型GaAs _{1– x} Sb _x的新型光电探测器/ InAs核-壳纳米线。光电探测器在室温下在0.3 V的极低偏置电压下对可见光（488 nm）到短波长IR（1800 nm）的光表现出高响应。该器件的高性能包括超低暗电流（在室温下为32 pA），对633 nm光具有高响应速度（0.45 ms），对1310 nm电信光（0.12 A / W）具有高响应性，甚至对1800 nm光具有高响应性（开/关比为2.5），此外，这些器件还具有出色的整流I–V特性（在±0.3 V的电压范围内，电流整流比约为178）。这些结果表明，GaAs _{1– x} Sb _x/ InAs核壳纳米线器件在纳米电子器件，光电器件和集成光电器件中的应用前景广阔。

更新日期：2019-10-15

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南