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Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures†
Nanoscale Advances ( IF 4.6 ) Pub Date : 2019-09-30 , DOI: 10.1039/c9na00340a Xue Gao 1, 2, 3 , Baishun Yang 4 , Xavier Devaux 2 , Hongxin Yang 4 , Jianping Liu 1, 3 , Shiheng Liang 2 , Mathieu Stoffel 2 , Ludovic Pasquier 2 , Bérangère Hyot 5 , Adeline Grenier 5 , Nicolas Bernier 5 , Sylvie Migot 2 , Stéphane Mangin 2 , Hervé Rinnert 2 , Chunping Jiang 1, 3 , Zhongming Zeng 1, 3 , Ning Tang 6 , Qian Sun 1, 3 , Sunan Ding 1, 3 , Hui Yang 1, 3 , Yuan Lu 2
Nanoscale Advances ( IF 4.6 ) Pub Date : 2019-09-30 , DOI: 10.1039/c9na00340a Xue Gao 1, 2, 3 , Baishun Yang 4 , Xavier Devaux 2 , Hongxin Yang 4 , Jianping Liu 1, 3 , Shiheng Liang 2 , Mathieu Stoffel 2 , Ludovic Pasquier 2 , Bérangère Hyot 5 , Adeline Grenier 5 , Nicolas Bernier 5 , Sylvie Migot 2 , Stéphane Mangin 2 , Hervé Rinnert 2 , Chunping Jiang 1, 3 , Zhongming Zeng 1, 3 , Ning Tang 6 , Qian Sun 1, 3 , Sunan Ding 1, 3 , Hui Yang 1, 3 , Yuan Lu 2
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We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[![[1 with combining macron]](https://www.rsc.org/images/entities/char_0031_0304.gif)
10]//Co(0001)[11![[2 with combining macron]](https://www.rsc.org/images/entities/char_0032_0304.gif)
0]//MgO(111)[10]//GaN(0002)[110]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.
中文翻译：
Au/Co/MgO/GaN 异质结构中强垂直磁各向异性的证据†
我们通过实验和第一性原理计算报告了 Au/Co/MgO/GaN 异质结构中的强垂直磁各向异性 (PMA)。Au/Co/MgO 异质结构已通过分子束外延 (MBE) 在 GaN/蓝宝石衬底上生长。通过精心优化生长条件，我们得到了具有晶体取向关系Au(111)[10]//Co(0001)[11 0]//MgO(111)[10 ]//GaN(0002)的全外延结构[110]。更有趣的是，我们证明了在 MgO/GaN 上生长的 4.6 nm 厚的 Co 薄膜仍然表现出很大的垂直磁各向异性。对 Co (4ML)/MgO(111) 结构进行的第一性原理计算表明，与参考 4ML 厚 Co hcp 薄膜相比，MgO(111) 表面可以将磁各向异性能量大幅提高 40%。我们的层分辨和轨道杂化分辨各向异性分析有助于阐明 PMA 增强的起源是由于在 Co/MgO 界面处 O 2p 和 Co 3d 轨道的界面杂化。垂直磁化的 Au/Co/MgO/GaN 异质结构有望在没有任何外部磁场的情况下在基于 GaN 的光电器件中进行有效的自旋注入和检测。
更新日期：2019-11-06
10]//Co(0001)[110]//MgO(111)[10]//GaN(0002)[110]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.
中文翻译：
Au/Co/MgO/GaN 异质结构中强垂直磁各向异性的证据†
我们通过实验和第一性原理计算报告了 Au/Co/MgO/GaN 异质结构中的强垂直磁各向异性 (PMA)。Au/Co/MgO 异质结构已通过分子束外延 (MBE) 在 GaN/蓝宝石衬底上生长。通过精心优化生长条件，我们得到了具有晶体取向关系Au(111)[
10]//Co(0001)[11 0]//MgO(111)[10 ]//GaN(0002)的全外延结构[110]。更有趣的是，我们证明了在 MgO/GaN 上生长的 4.6 nm 厚的 Co 薄膜仍然表现出很大的垂直磁各向异性。对 Co (4ML)/MgO(111) 结构进行的第一性原理计算表明，与参考 4ML 厚 Co hcp 薄膜相比，MgO(111) 表面可以将磁各向异性能量大幅提高 40%。我们的层分辨和轨道杂化分辨各向异性分析有助于阐明 PMA 增强的起源是由于在 Co/MgO 界面处 O 2p 和 Co 3d 轨道的界面杂化。垂直磁化的 Au/Co/MgO/GaN 异质结构有望在没有任何外部磁场的情况下在基于 GaN 的光电器件中进行有效的自旋注入和检测。
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