Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling.,ACS Nano

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Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling.
ACS Nano ( IF 15.8 ) Pub Date : 2019-09-27 , DOI: 10.1021/acsnano.8b09479
Jiadong Zhou ₁ , Xianghua Kong _{2,

3} , M Chandra Sekhar _{4,

5} , Junhao Lin ₆ , Frederic Le Goualher ₁ , Rui Xu _{3,

7} , Xiaowei Wang ₁ , Yu Chen ₈ , Yao Zhou ₈ , Chao Zhu ₁ , Wei Lu _{4,

5} , Fucai Liu ₁ , Bijun Tang ₁ , Zenglong Guo ₆ , Chao Zhu ₁ , Zhihai Cheng _{3,

7} , Ting Yu ₈ , Kazu Suenaga ₉ , Dong Sun _{4,

5} , Wei Ji ₃ , Zheng Liu _{1,

10}

Affiliation

School of Materials Science and Engineering , Nanyang Technological University , 639798 Singapore.
Department of Physics and Centre for the Physics of Materials , McGill University , Montreal , Quebec H3A 2T8 , Canada.
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices , Renmin University of China , Beijing 100872 , China.
International Center for Quantum Materials, School of Physics , Peking University , Beijing 100871 , China.
Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China.
Department of Physics , Southern University of Science and Technology , Shenzhen 518055 , China.
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , China.
Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore.
National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan.
CNRS International NTU THALES Research Alliances, UMI 3288 , Research Techno Plaza, 50 Nanyang Drive , Border X Block, Level 6, 637553 Singapore.

PtSe2, a layered two-dimensional transition-metal dichalcogenide (TMD), has drawn intensive attention owing to its layer-dependent band structure, high air stability, and spin-layer locking effect which can be used in various applications for next-generation optoelectronic and electronic devices or catalysis applications. However, synthesis of PtSe2 is highly challenging due to the low chemical reactivity of Pt sources. Here, we report the chemical vapor deposition of monolayer PtSe2 single crystals on MoSe2. The periodic Moiré patterns from the vertically stacked heterostructure (PtSe2/MoSe2) are clearly identified via annular dark-field scanning transmission electron microscopy. First-principles calculations show a type II band alignment and reveal interface states originating from the strong-weak interlayer coupling (SWIC) between PtSe2 and MoSe2 monolayers, which is supported by the electrostatic force microscopy imaging. Ultrafast hole transfer between PtSe2 and MoSe2 monolayers is observed in the PtSe2/MoSe2 heterostructure, matching well with the theoretical results. Our study will shed light on the synthesis of Pt-based TMD heterostructures and boost the realization of SWIC-based optoelectronic devices.

中文翻译：

MoSe2上强层间耦合外延合成单层PtSe2单晶。

PtSe2是一种层状二维过渡金属双金属硫化物（TMD），由于其依赖于层的能带结构，高空气稳定性和自旋层锁定效应而备受关注，可用于下一代光电和电子设备或催化应用。然而，由于Pt源的低化学反应性，PtSe 2的合成极具挑战性。在这里，我们报告在MoSe2上单层PtSe2单晶的化学气相沉积。垂直堆叠的异质结构（PtSe2 / MoSe2）的周期性莫尔图案可通过环形暗场扫描透射电子显微镜清楚地识别。第一性原理计算显示II型能带对准，并揭示了界面状态，该界面状态源自PtSe2和MoSe2单层之间的强弱层间耦合（SWIC），这由静电力显微镜成像支持。在PtSe2 / MoSe2异质结构中观察到PtSe2和MoSe2单层之间的超快空穴传输，与理论结果非常吻合。我们的研究将阐明基于Pt的TMD异质结构的合成，并促进基于SWIC的光电器件的实现。

更新日期：2019-09-28

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