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Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure.
Nano Letters ( IF 9.6 ) Pub Date : 2019-09-25 , DOI: 10.1021/acs.nanolett.9b02824
Weihao Zheng 1, 2 , Biyuan Zheng 1, 2 , Ying Jiang 2 , Changlin Yan 1, 3 , Shula Chen 1 , Ying Liu 1 , Xinxia Sun 1 , Chenguang Zhu 1 , Zhaoyang Qi 2 , Tiefeng Yang 2 , Wei Huang 2 , Peng Fan 2 , Feng Jiang 2 , Xiaoxia Wang 2 , Xiujuan Zhuang 2 , Dong Li 1 , Ziwei Li 1 , Wei Xie 4 , Wei Ji 3 , Xiao Wang 2 , Anlian Pan 1, 2
Nano Letters ( IF 9.6 ) Pub Date : 2019-09-25 , DOI: 10.1021/acs.nanolett.9b02824
Weihao Zheng 1, 2 , Biyuan Zheng 1, 2 , Ying Jiang 2 , Changlin Yan 1, 3 , Shula Chen 1 , Ying Liu 1 , Xinxia Sun 1 , Chenguang Zhu 1 , Zhaoyang Qi 2 , Tiefeng Yang 2 , Wei Huang 2 , Peng Fan 2 , Feng Jiang 2 , Xiaoxia Wang 2 , Xiujuan Zhuang 2 , Dong Li 1 , Ziwei Li 1 , Wei Xie 4 , Wei Ji 3 , Xiao Wang 2 , Anlian Pan 1, 2
Affiliation
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van der Waals multilayer heterostructures have drawn increasing attention due to the potential for achieving high-performance photonic and optoelectronic devices. However, the carrier interlayer transportation behavior in multilayer structures, which is essential for determining the device performance, remains unrevealed. Here, we report a general strategy for studying and manipulating the carrier interlayer transportation in van der Waals multilayers by constructing type-I heterostructures, with a desired narrower bandgap monolayer acting as a carrier extraction layer. For heterostructures comprised of multilayer PbI2 and monolayer WS2, we find similar interlayer diffusion coefficients of ∼0.039 and ∼0.032 cm2 s-1 for electrons and holes in the PbI2 multilayer by fitting the time-resolved carrier dynamics based on the diffusion model. Because of the balanced carrier interlayer diffusion and the injection process at the heterointerface, the photoluminescence emission of the bottom WS2 monolayer is greatly enhanced by up to 106-fold at an optimized PbI2 thickness of the heterostructure. Our results provide valuable information on carrier interlayer transportation in van der Waals multilayer structures and pave the way for utilizing carrier behaviors to improve device performances.
中文翻译：
通过构建I型异质结构来探测和操纵范德华多层膜中的载流子层间扩散。
van der Waals多层异质结构由于具有实现高性能光子和光电器件的潜力而受到越来越多的关注。然而，对于确定器件性能至关重要的多层结构中的载流子层间传输行为仍然没有得到揭示。在这里，我们报告了一种通过构造I型异质结构研究和操纵范德华多层结构中载流子层间运输的一般策略，其中所需的较窄带隙单层充当载流子提取层。对于由多层PbI2和单层WS2组成的异质结构，通过基于扩散模型拟合时间分辨的载流子动力学，我们发现PbI2多层中电子和空穴的层间扩散系数约为0.039和0.032 cm2 s-1。由于平衡的载流子层间扩散和异质界面处的注入过程，在异质结构的最佳PbI2厚度下，底部WS2单层的光致发光发射大大增强了多达106倍。我们的结果提供了有关范德华多层结构中载流子夹层运输的有价值的信息，并为利用载流子行为改善器件性能铺平了道路。
更新日期：2019-09-26
中文翻译：
通过构建I型异质结构来探测和操纵范德华多层膜中的载流子层间扩散。
van der Waals多层异质结构由于具有实现高性能光子和光电器件的潜力而受到越来越多的关注。然而，对于确定器件性能至关重要的多层结构中的载流子层间传输行为仍然没有得到揭示。在这里，我们报告了一种通过构造I型异质结构研究和操纵范德华多层结构中载流子层间运输的一般策略，其中所需的较窄带隙单层充当载流子提取层。对于由多层PbI2和单层WS2组成的异质结构，通过基于扩散模型拟合时间分辨的载流子动力学，我们发现PbI2多层中电子和空穴的层间扩散系数约为0.039和0.032 cm2 s-1。由于平衡的载流子层间扩散和异质界面处的注入过程，在异质结构的最佳PbI2厚度下，底部WS2单层的光致发光发射大大增强了多达106倍。我们的结果提供了有关范德华多层结构中载流子夹层运输的有价值的信息，并为利用载流子行为改善器件性能铺平了道路。
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