Perylene tetracarboxylic diimide (PDI) derivative based low-dimensional organic semiconductor devices are under intensive interest because of their low cost, high reproducibility, large area, and good performance. However, the realization of arrayed self-assembled submicron/nanowires or tubes lags behind. Herein, we present a simple solution-processed fabrication method combining surface-selective deposition, surface-modified geometrically confined crystal growth and directional solvent vapor annealing technologies for the large-area, highly arrayed N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) submicron crystalline wires. The annealing time and the selected solvent greatly influence the formation of the organic wires. To fabricate bottom gate top-contact organic field effect transistors (OFETs), a simple, reproducible, reusable, and ultrathin shadow mask is fabricated and applied to deposit top electrodes on the arrayed submicron wires directly, which is beneficial for industry applications. Additionally, OFETs with a high mobility of 2.2 cm²·V^–1·s^–1 (an average mobility of 1.5 cm²·V^–1·s^–1) have been obtained, which is better than the performance previously reported for PTCDI-C8 based devices. Moreover, the devices exhibit robust air stability and remain stable after exposure in air over 12 days. Our results pave the way toward the fabrication of high performance and integrated organic devices.

中文翻译：

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用于高迁移率低尺寸有机场效应晶体管的PTCDI-C8可控自组装

基于四羧酸二酰亚胺（PDI）衍生物的低尺寸有机半导体器件因其低成本，高可重复性，大面积和良好性能而受到广泛关注。然而，阵列自组装的亚微米/纳米线或管的实现落后。在这里，我们提出了一种简单的固溶处理制造方法，该方法结合了表面选择性沉积，表面改性的几何约束晶体生长和定向溶剂气相退火技术，适用于大面积，高度排列的N，N'-二辛基-3,4,9,10--二甲酰亚胺（PTCDI-C8）亚微米结晶线。退火时间和所选择的溶剂会极大地影响有机线材的形成。为了制造底栅顶部接触有机场效应晶体管（OFET），制造了一种简单，可复制，可重复使用且超薄的阴影掩模，并将其直接用于在阵列的亚微米导线上沉积顶部电极，这对工业应用是有利的。另外，OFET具有2.2 cm ² ·V ^–1 ·s ^–1的高迁移率（平均迁移率为1.5 cm ² ·V ^–1 ·s ^–1的平均迁移率），它比以前报告的基于PTCDI-C8的设备的性能要好。此外，这些设备表现出强大的空气稳定性，并且在暴露于空气中超过12天后仍保持稳定。我们的结果为高性能和集成有机器件的制造铺平了道路。