Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces,Advanced Materials Interfaces

当前位置： X-MOL 学术 › Adv. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2019-09-18 , DOI: 10.1002/admi.201901456
Hao‐Ting Kung ₁ , Peicheng Li ₁ , Jae‐Jin Lee ₁ , Yongbiao Zhao ₂ , Antoine Dumont ₁ , Zheng‐Hong Lu _{1,

2,

3}

Affiliation

Oxide–oxide heterojunction interfaces (OHIs) are foundations for many applications such as transistors, optoelectronic devices, and chemical catalysis. The formation of OHIs involves complex events such as charge transfer, interfacial diffusion, and chemical reactions. These events collectively contribute to an OHI's energy structure and to its ability to perform an intended application. Here, multiple MoO₃/oxide interfaces are studied at which changes in multiple oxidation states Mo^x⁺ can be easily tracked. For the formation of reactive interfaces, it is found that the primary driving force behind the reduction of MoO₃ is redox reactions at the interfaces. For the nonreactive interface, the reduction of MoO₃ occurs as a result of various factors such as oxygen deficiency. At these OHIs, band bending and formation of interface dipole are observed. It is discovered that the degrees of interface dipole and work function at the OHIs scale linearly as a function of the contacting oxide's work function. These findings provide the guide in designing OHIs for a specific application.

中文翻译：

氧化物-氧化物异质结界面处的反应和能级

氧化物-氧化物异质结界面（OHI）是晶体管，光电器件和化学催化等许多应用的基础。OHI的形成涉及复杂的事件，例如电荷转移，界面扩散和化学反应。这些事件共同促进了OHI的能源结构及其执行预期应用的能力。在此，研究了多个MoO ₃ /氧化物界面，在该界面上可以轻松跟踪多个氧化态Mo ^x^+的变化。为了形成反应性界面，发现MoO ₃还原背后的主要驱动力是界面处的氧化还原反应。对于非反应性界面，MoO ₃的减少由于各种因素（例如缺氧）而导致发生哮喘。在这些OHI处，观察到带弯曲和界面偶极子的形成。已发现，在OHI处的界面偶极子和功函数的程度与接触氧化物的功函数成线性比例关系。这些发现为设计针对特定应用的OHI提供了指导。

更新日期：2019-09-18

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南