Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe₂, both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T higher-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.

拓扑材料研究的大部分急剧增长都集中在拓扑保护的表面态上。虽然具有破坏反转或时间反转对称性的外尔半金属等拓扑材料的磁畴壁可以为探索拓扑界面态提供一个狩猎场，但迄今为止此类研究很少受到关注。在这里，利用原位低温透射电子显微镜结合第一性原理计算，我们发现了 MoTe ₂中有趣的畴壁结构，无论是在低温（T）Weyl相的极性变体之间，还是在该相与高温Weyl相之间。T高阶拓扑相。我们演示了如何用电子束操纵极性畴壁，并表明相畴壁倾向于沿c轴形成超晶格结构。扫描隧道显微镜表明相域壁处导电铰链状态的可能特征。我们的结果为研究拓扑界面状态和揭示拓扑材料中畴壁的多功能方面开辟了途径。