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Solar-Blind Self-Powered Photodetector Using Solution-Processed Amorphous Core–Shell Gallium Oxide Nanoparticles
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-20 , DOI: 10.1021/acsami.9b11694 Somak Mitra 1 , Yusin Pak 1 , Bin Xin 1 , Dhaifallah R. Almalawi 1 , Nimer Wehbe 2 , Iman S. Roqan 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-20 , DOI: 10.1021/acsami.9b11694 Somak Mitra 1 , Yusin Pak 1 , Bin Xin 1 , Dhaifallah R. Almalawi 1 , Nimer Wehbe 2 , Iman S. Roqan 1
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Solution-processed deep ultraviolet (DUV) photodetectors based on wide band gap oxide semiconductors (WBGS) working in the <280 nm wavelength range are drawing increasing attention of the research community because of their cost-effective production and potential use in diverse applications. Here, we report on the synthesis of novel core–shell amorphous gallium oxide nanoparticles (NPs) (a-Ga2Ox/GaOx NPs) that have not been previously obtained. The amorphous gallium oxide NPs were synthesized from gallium nitride using the femtosecond laser ablation in liquid technique. Transmission electron microscopy and electron energy-loss spectroscopy measurements revealed the amorphous NP nature with a Ga-rich core and oxide-rich shell. Optical properties of these core-shell amorphous gallium oxide NPs were investigated by time-resolved spectroscopy and photoluminescence. As a proof of concept, the amorphous gallium oxide NPs were used as an active layer in a solar-blind DUV photodetector with high responsivity (778 mA/W) at 244 nm, which is the highest responsivity recorded to date for any solution-processed DUV photodetector. This work on a high-performance solution-processed device paves the way for large-scale industrial application of the WBGS.
中文翻译：
使用溶液处理的非晶核-壳氧化镓纳米粒子的太阳盲自供电光电探测器
基于工作在小于280 nm波长范围的宽带隙氧化物半导体（WBGS）的溶液处理深紫外（DUV）光电探测器因其具有成本效益的生产以及在各种应用中的潜在用途而受到研究界的越来越多的关注。在这里，我们报道了新型核-壳非晶态氧化镓纳米颗粒（NPs）（a-Ga 2 O x / GaO xNPs以前尚未获得。使用飞秒激光烧蚀液体技术由氮化镓合成了非晶态氧化镓NP。透射电子显微镜和电子能量损失谱测量结果表明，非晶态的NP性质具有富含Ga的核和富含氧化物的壳。通过时间分辨光谱和光致发光研究了这些核-壳非晶态氧化镓纳米粒子的光学性质。作为概念的证明，非晶态氧化镓NPs被用作太阳盲DUV光电探测器中的有源层，在244 nm处具有高响应度（778 mA / W），这是迄今为止所记录的任何溶液处理方法中最高的响应度DUV光电探测器。这项在高性能溶液处理设备上的工作为WBGS的大规模工业应用铺平了道路。
更新日期：2019-09-21
中文翻译：
使用溶液处理的非晶核-壳氧化镓纳米粒子的太阳盲自供电光电探测器
基于工作在小于280 nm波长范围的宽带隙氧化物半导体（WBGS）的溶液处理深紫外（DUV）光电探测器因其具有成本效益的生产以及在各种应用中的潜在用途而受到研究界的越来越多的关注。在这里，我们报道了新型核-壳非晶态氧化镓纳米颗粒（NPs）（a-Ga 2 O x / GaO xNPs以前尚未获得。使用飞秒激光烧蚀液体技术由氮化镓合成了非晶态氧化镓NP。透射电子显微镜和电子能量损失谱测量结果表明，非晶态的NP性质具有富含Ga的核和富含氧化物的壳。通过时间分辨光谱和光致发光研究了这些核-壳非晶态氧化镓纳米粒子的光学性质。作为概念的证明，非晶态氧化镓NPs被用作太阳盲DUV光电探测器中的有源层，在244 nm处具有高响应度（778 mA / W），这是迄今为止所记录的任何溶液处理方法中最高的响应度DUV光电探测器。这项在高性能溶液处理设备上的工作为WBGS的大规模工业应用铺平了道路。
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