In article number 1800909, Ilia Valov, Carlo Ricciard, and co‐workers review state‐of‐the‐art memristive and neuromorphic devices based on nanowires. Resistive switching performances and synaptic functionalities of single isolated nanowires, nanowire arrays and random networks are analyzed, with a focus on the physical and chemical mechanisms underlaying resistive switching events. Challenges and future perspectives on nanowire based‐memristors are discussed.

中文翻译：

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纳米线忆阻器：基于金属氧化物纳米线的忆阻器件的最新发展和前景（Adv。Electron。Mater。9/2019）

在文章编号1800909中，Ilia Valov，Carlo Ricciard及其同事回顾了基于纳米线的最新忆阻和神经形态设备。分析了单个隔离的纳米线，纳米线阵列和随机网络的电阻切换性能和突触功能，重点是构成电阻切换事件的物理和化学机制。讨论了基于纳米线的忆阻器的挑战和未来前景。