Abstract The high sensitivity of graphene to the surface condition of the gate dielectric layer and its poor van der Waals adhesion with a flexible substrate result in interfacial sliding and fracturing of graphene at low strains, making the successful utilization of pristine graphene (PG) in flexible electronics challenging. Here, we report a facile method for the fabrication of flexible graphene field effect transistors (F-GFETs) using sandwiched fluorinated graphene (FG). The “FG-PG-FG” sandwich structure shows a high optical transparency (>94%) with an average carrier mobility above 340 cm2/V·s, higher than that obtained when GO and Ion gel were used as gate dielectric materials on F-GFETs and a relatively low gate leakage current of ~160 pA. Furthermore, we observed a high mechanical stability, retaining >88% of the original current output against bending deformation of up to 6 mm and >77% after 200 bending cycles by applying a tensile strain of 1.56%, compared to the control sample. This improved performance is attributed to the fact that the sandwiched FG provides a good dielectric environment by tuning the C/F ratio, which tightly fixes the PG under strain. These findings provide a new route for the future development of graphene-based flexible electronics.

中文翻译：

---

坚固的夹层氟化石墨烯用于高度可靠的柔性电子产品

摘要 石墨烯对栅极介电层表面状态的高敏感性及其与柔性基板的较差范德华粘附导致石墨烯在低应变下的界面滑动和断裂，使得原始石墨烯 (PG) 在柔性基板中的成功利用。电子产品具有挑战性。在这里，我们报告了一种使用夹层氟化石墨烯 (FG) 制造柔性石墨烯场效应晶体管 (F-GFET) 的简便方法。“FG-PG-FG”三明治结构表现出高透光率（>94%），平均载流子迁移率高于 340 cm2/V·s，高于使用 GO 和离子凝胶作为 F 上的栅极介电材料时获得的-GFET 和 ~160 pA 的相对较低的栅极漏电流。此外，我们观察到高机械稳定性，保持 > 与对照样品相比，通过施加 1.56% 的拉伸应变，原始电流输出的 88% 可抵抗高达 6 mm 的弯曲变形，并且在 200 次弯曲循环后大于 77%。这种改进的性能归因于这样一个事实，即夹层 FG 通过调整 C/F 比提供了良好的介电环境，从而在应变下紧紧固定 PG。这些发现为基于石墨烯的柔性电子产品的未来发展提供了新的途径。