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Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing.
ACS Nano ( IF 15.8 ) Pub Date : 2019-09-13 , DOI: 10.1021/acsnano.9b05574 Ziyu Qin 1, 2 , Leyi Loh 2, 3 , Junyong Wang 2 , Xiaomin Xu 4 , Qi Zhang 2 , Benedikt Haas 4 , Carlos Alvarez 5 , Hanako Okuno 5 , Justin Zhou Yong 2 , Thorsten Schultz 4, 6 , Norbert Koch 4, 6 , Jiadong Dan 3 , Stephen J Pennycook 3 , Dawen Zeng 1 , Michel Bosman 3 , Goki Eda 2, 7, 8
ACS Nano ( IF 15.8 ) Pub Date : 2019-09-13 , DOI: 10.1021/acsnano.9b05574 Ziyu Qin 1, 2 , Leyi Loh 2, 3 , Junyong Wang 2 , Xiaomin Xu 4 , Qi Zhang 2 , Benedikt Haas 4 , Carlos Alvarez 5 , Hanako Okuno 5 , Justin Zhou Yong 2 , Thorsten Schultz 4, 6 , Norbert Koch 4, 6 , Jiadong Dan 3 , Stephen J Pennycook 3 , Dawen Zeng 1 , Michel Bosman 3 , Goki Eda 2, 7, 8
Affiliation
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Controlled substitutional doping of two-dimensional transition-metal dichalcogenides (TMDs) is of fundamental importance for their applications in electronics and optoelectronics. However, achieving p-type conductivity in MoS2 and WS2 is challenging because of their natural tendency to form n-type vacancy defects. Here, we report versatile growth of p-type monolayer WS2 by liquid-phase mixing of a host tungsten source and niobium dopant. We show that crystallites of WS2 with different concentrations of substitutionally doped Nb up to 1014 cm-2 can be grown by reacting solution-deposited precursor film with sulfur vapor at 850 °C, reflecting the good miscibility of the precursors in the liquid phase. Atomic-resolution characterization with aberration-corrected scanning transmission electron microscopy reveals that the Nb concentration along the outer edge region of the flakes increases consistently with the molar concentration of Nb in the precursor solution. We further demonstrate that ambipolar field-effect transistors can be fabricated based on Nb-doped monolayer WS2.
中文翻译：
液相前驱体混合法生长掺Nb的单层WS2。
二维过渡金属二硫化碳（TMD）的受控替代掺杂对其在电子和光电子领域的应用至关重要。但是，在MoS2和WS2中实现p型电导率具有挑战性，因为它们自然会形成n型空位缺陷。在这里，我们报告了通过主体钨源和铌掺杂剂的液相混合，p型单层WS2的多功能生长。我们表明，通过在850°C下使溶液沉积的前驱体膜与硫蒸气反应，可以生长具有高达1014 cm-2的不同浓度的Nb替代掺杂的WS2的微晶，这反映了前驱体在液相中的良好混溶性。用像差校正的扫描透射电子显微镜对原子分辨率进行表征，结果表明，沿着薄片外缘区域的Nb浓度与前体溶液中Nb的摩尔浓度一致地增加。我们进一步证明，可以基于掺Nb的单层WS2来制造双极场效应晶体管。
更新日期：2019-09-14
中文翻译：
液相前驱体混合法生长掺Nb的单层WS2。
二维过渡金属二硫化碳（TMD）的受控替代掺杂对其在电子和光电子领域的应用至关重要。但是，在MoS2和WS2中实现p型电导率具有挑战性，因为它们自然会形成n型空位缺陷。在这里，我们报告了通过主体钨源和铌掺杂剂的液相混合，p型单层WS2的多功能生长。我们表明，通过在850°C下使溶液沉积的前驱体膜与硫蒸气反应，可以生长具有高达1014 cm-2的不同浓度的Nb替代掺杂的WS2的微晶，这反映了前驱体在液相中的良好混溶性。用像差校正的扫描透射电子显微镜对原子分辨率进行表征，结果表明，沿着薄片外缘区域的Nb浓度与前体溶液中Nb的摩尔浓度一致地增加。我们进一步证明，可以基于掺Nb的单层WS2来制造双极场效应晶体管。
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