Vertical Stacking of Copper Sulfide Nanoparticles and Molybdenum Sulfide Nanosheets for Enhanced Nonlinear Absorption,ACS Applied Materials & Interfaces

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Vertical Stacking of Copper Sulfide Nanoparticles and Molybdenum Sulfide Nanosheets for Enhanced Nonlinear Absorption
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-17 , DOI: 10.1021/acsami.9b06662
Ying Liang _{1,

2} , Hui Li _{3,

4} , Ruipeng Hou ₁ , Jun Wang ₃ , Kai Wang ₅ , Mengke Ge ₅ , Jun Luo ₅ , Zhipeng Huang ₁ , Chi Zhang ₁

Affiliation

The construction of p–n junctions is necessitated by applications which require effective charge separation. Here, a novel heterostructure (HS) of molybdenum sulfide (MoS₂) and copper sulfide (Cu_2–xS) was synthesized by chemical vapor deposition, with Cu_2–xS nanoparticles vertically stacked on a MoS₂ nanosheet. A well-defined epitaxial relationship between MoS₂ and Cu_2–xS is established, although the corresponding lattice mismatch is as large as 20%. The band-edge alignment is experimentally determined, indicating that the MoS₂–Cu_2–xS HS is a type II heterojunction. Photoluminescence quenching indicates effective charge separation in HS. The resultant HS shows enhanced nonlinear absorption in comparison with single-component MoS₂ nanosheets and Cu_2–xS nanoparticles.

中文翻译：

垂直堆叠硫化铜纳米颗粒和硫化钼纳米片增强非线性吸收

p–n结的构造是需要有效电荷分离的应用所必需的。在这里，通过化学气相沉积合成了一种新的硫化钼（MoS ₂）和硫化铜（Cu _{2– x} S）的异质结构（HS），将Cu _{2– x} S纳米粒子垂直堆叠在MoS ₂纳米片上。尽管相应的晶格失配高达20％，但在MoS ₂和Cu _{2– x} S之间建立了明确定义的外延关系。实验确定了带边对准，表明MoS ₂ –Cu _{2– x}S HS是II型异质结。光致发光猝灭表明在HS中有效的电荷分离。与单组分MoS ₂纳米片和Cu _{2– x} S纳米粒子相比，所得的HS显示出增强的非线性吸收。

更新日期：2019-09-18

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