Molybdenum disulfide (MoS₂), as a layered transition metal chalcogenide (TMC) material, has been widely employed in many fields, including electrode materials, photo(electro)chemical water splitting, transistors and biosensors and so on due to its unique electronic structure and physical/chemical properties. However, as a single semiconductor material, the large-scale application of MoS₂ in many aspects is still limited, for example, the catalytic performance of semiconducting 2H-MoS₂ is low due to the existence of a large number of inert basal planes; the high catalytic 1T-MoS₂ cannot be prepared in large-scale. Considering these, a great deal of researches have been devoted to improve the electronic and catalytic activity of MoS₂ (2H and 1T phase), such as activating 2H-MoS₂ inert basal planes and applying the optimized technologies to directly prepare the desired 1T-MoS₂, etc. In this review, two common phases of MoS₂: 2H phase, 1T (1T’, i.e. distorted form of 1T-MoS₂) phase are introduced in detail from the point of view of electronic structure. The catalytic activity sites of these phases are discussed. Based on the preparation methods of MoS₂ that have been reported in the past, the basic principles of these methods and the recent developments of MoS₂ preparation are also introduced briefly, and some new preparation techniques are also mentioned. In addition, the mechanism and strategies of transformation of 2H and 1T phase in MoS₂ are described in detail. Most importantly, this review summarizes comprehensively the activation strategies of MoS₂ inert basal planes, which is of great significance for improving the catalytic activity of MoS₂ and further research on MoS₂. In the end, we have a comprehensive summary of the current application of MoS₂ and its future developments.

二硫化钼（MoS ₂）作为一种层状过渡金属硫属化物（TMC）材料，由于其独特的电子结构而已广泛应用于许多领域，包括电极材料，光（电）化学水分解，晶体管和生物传感器等。和物理/化学性质。然而，作为单一的半导体材料，MoS ₂在许多方面的大规模应用仍然受到限制，例如，由于存在大量的惰性基面，半导体2H-MoS ₂的催化性能较低。高催化1T-MoS ₂不能大规模制备。考虑到这些，已经进行了大量的研究来改善MoS的电子和催化活性。₂（2H和1T阶段），例如激活2H-MoS ₂惰性基底平面并应用优化技术直接制备所需的1T-MoS ₂等，在本文中，MoS _2的两个常见阶段为：2H相，1T从电子结构的角度详细介绍了（1T'，即1T-MoS _2的变形形式）相。讨论了这些相的催化活性位点。根据过去报道的MoS ₂的制备方法，这些方法的基本原理以及MoS ₂的最新发展还简要介绍了制备方法，还提到了一些新的制备技术。此外，还详细描述了MoS ₂中2H和1T相转变的机理和策略。最重要的是，本综述全面总结了MoS ₂惰性基面的活化策略，这对于提高MoS ₂的催化活性和进一步研究MoS ₂具有重要意义。最后，我们对MoS ₂的当前应用及其未来发展进行了全面的总结。