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Tailoring the Properties of UiO-66 through Defect Engineering: A Review
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2019-09-10 , DOI: 10.1021/acs.iecr.9b03188
Yi Feng 1 , Qian Chen 1 , Minqi Jiang 1 , Jianfeng Yao 1
Affiliation  

Defects, which are commonly in metal organic frameworks (MOFs), are closely related to the performance of materials in various applications. Unlike other MOFs where metal ion clusters are usually 4-, 5-, or 6-connected to the organic linkers, one secondary building unit (SBU) of UiO-66 is coordinated by 12 Zr6 clusters via 12 benzen-1,4-dicarboxlate (BDC) linkers. Therefore, the integrity of the structure can be well maintained after linker or even cluster missing. So far, many methods have been reported on the defect engineering of UiO-66 including adjusting the synthesis conditions (temperature, Zr/linker ratio and choice of Zr precursor), addition of modulators, thermal activation/dehydration, linker modification and metal cation substitution. Various techniques have been used and developed to characterize the existence and concentration of defects, though each technique has its limitations. The formation of defects not only changes the pore structure, but also brings beneficial changes in thermal, electronic, catalytic and adsorbing abilities; thus improved performance can be achieved when defective UiO-66 is used as Lewis and/or Brönsted acids, photocatalysts, adsorbents, electrodes or porous support. In this review, a comprehensive review of defect engineering for UiO-66 including their preparations, characterizations, applications, and then the challenges and outlook are discussed, aiming to provide some designing knowledge for the synthesis of defective UiO-66 with high-performance and promote the wide application of UiO-66 in various fields.

中文翻译:

通过缺陷工程定制UiO-66的性质:综述

金属有机骨架(MOF)中常见的缺陷与各种应用中材料的性能密切相关。与金属离子簇通常以4、5或6连接到有机连接基的其他MOF不同,UiO-66的一个二级构建单元(SBU)由12 Zr 6配位通过12个benzen-1,4-dicarboxlate(BDC)链接器进行聚类。因此,链接器甚至簇丢失后,可以很好地保持结构的完整性。迄今为止,已报道了许多有关UiO-66缺陷工程的方法,包括调节合成条件(温度,Zr /连接基比例和Zr前体的选择),添加调节剂,热活化/脱水,连接基修饰和金属阳离子取代等。 。尽管每种技术都有其局限性,但已使用和开发了各种技术来表征缺陷的存在和集中。缺陷的形成不仅改变了孔的结构,而且带来了热,电子,催化和吸附能力的有益变化。因此,当有缺陷的UiO-66用作路易斯酸和/或布朗斯台德酸时,可以提高性能。光催化剂,吸附剂,电极或多孔载体。在这篇综述中,我们对UiO-66的缺陷工程进行了全面的综述,包括其制备,表征,应用以及挑战和前景,目的是为合成高性能,高性能的UiO-66提供一些设计知识。促进UiO-66在各个领域的广泛应用。
更新日期:2019-09-11
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