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Lead-Free Antimony-Based Light-Emitting Diodes through the Vapor–Anion-Exchange Method
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-10 , DOI: 10.1021/acsami.9b10602 Anupriya Singh,Nan-Chieh Chiu,Karunakara Moorthy Boopathi,Yu-Jung Lu,Anisha Mohapatra,Gang Li,Yang-Fang Chen,Tzung-Fang Guo,Chih-Wei Chu
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-10 , DOI: 10.1021/acsami.9b10602 Anupriya Singh,Nan-Chieh Chiu,Karunakara Moorthy Boopathi,Yu-Jung Lu,Anisha Mohapatra,Gang Li,Yang-Fang Chen,Tzung-Fang Guo,Chih-Wei Chu
Hybrid lead halide perovskites continue to attract interest for use in optoelectronic devices such as solar cells and light-emitting diodes. Although challenging, the replacement of toxic lead in these systems is an active field of research. Recently, the use of trivalent metal cations (Bi3+ and Sb3+) that form defect perovskites A3B2X9 has received great attention for the development of solar cells, but their light-emissive properties have not previously been studied. Herein, an all-inorganic antimony-based two-dimensional perovskite, Cs3Sb2I9, was synthesized using the solution process. Vapor–anion-exchange method was employed to change the structural composition from Cs3Sb2I9 to Cs3Sb2Br9 or Cs3Sb2Cl9 by treating CsI/SbI3 spin-coated films with SbBr3 or SbCl3, respectively. This novel method facilitates the fabrication of Cs3Sb2Br9 or Cs3Sb2Cl9 through solution processing without the need of using poorly soluble precursors (e.g., CsCl and CsBr). We go on to demonstrate electroluminescence from a device employing Cs3Sb2I9 emitter sandwiched between ITO/PEDOT:PSS and TPBi/LiF/Al as the hole and electron injection electrodes, respectively. A visible–infrared radiance of 0.012 W·Sr–1·m–2 was measured at 6 V when Cs3Sb2I9 was the active emitter layer. These proof-of-principle devices suggest a viable path toward low-dimensional, lead-free A3B2X9 perovskite optoelectronics.
中文翻译:
通过蒸气-阴离子交换法的无铅锑基发光二极管
混合卤化铅钙钛矿继续引起人们的兴趣,将其用于光电子器件,例如太阳能电池和发光二极管。尽管具有挑战性,但在这些系统中替换有毒铅是一个活跃的研究领域。近来,形成缺陷钙钛矿A 3 B 2 X 9的三价金属阳离子(Bi 3+和Sb 3+)的使用已受到太阳能电池开发的极大关注,但是它们的发光性质以前没有被研究过。本文中,基于全无机锑的二维钙钛矿Cs 3 Sb 2 I 9,是使用溶液法合成的。通过用SbBr 3或SbCl 3处理旋涂的CsI / SbI 3薄膜,采用气相-阴离子交换法将结构组成从Cs 3 Sb 2 I 9变为Cs 3 Sb 2 Br 9或Cs 3 Sb 2 Cl 9。, 分别。这种新颖的方法有助于Cs 3 Sb 2 Br 9或Cs 3 Sb 2 Cl 9的制造通过溶液处理无需使用难溶的前体(例如CsCl和CsBr)。我们继续展示了使用Cs 3 Sb 2 I 9发射极夹在ITO / PEDOT:PSS和TPBi / LiF / Al之间作为空穴和电子注入电极的器件的电致发光。当Cs 3 Sb 2 I 9为有源发射极层时,在6 V下测得的可见红外辐射为0.012 W·Sr –1 ·m –2。这些原理证明装置为实现低尺寸,无铅的A 3 B 2 X 9钙钛矿光电技术提供了一条可行的途径。
更新日期:2019-09-11
中文翻译:
通过蒸气-阴离子交换法的无铅锑基发光二极管
混合卤化铅钙钛矿继续引起人们的兴趣,将其用于光电子器件,例如太阳能电池和发光二极管。尽管具有挑战性,但在这些系统中替换有毒铅是一个活跃的研究领域。近来,形成缺陷钙钛矿A 3 B 2 X 9的三价金属阳离子(Bi 3+和Sb 3+)的使用已受到太阳能电池开发的极大关注,但是它们的发光性质以前没有被研究过。本文中,基于全无机锑的二维钙钛矿Cs 3 Sb 2 I 9,是使用溶液法合成的。通过用SbBr 3或SbCl 3处理旋涂的CsI / SbI 3薄膜,采用气相-阴离子交换法将结构组成从Cs 3 Sb 2 I 9变为Cs 3 Sb 2 Br 9或Cs 3 Sb 2 Cl 9。, 分别。这种新颖的方法有助于Cs 3 Sb 2 Br 9或Cs 3 Sb 2 Cl 9的制造通过溶液处理无需使用难溶的前体(例如CsCl和CsBr)。我们继续展示了使用Cs 3 Sb 2 I 9发射极夹在ITO / PEDOT:PSS和TPBi / LiF / Al之间作为空穴和电子注入电极的器件的电致发光。当Cs 3 Sb 2 I 9为有源发射极层时,在6 V下测得的可见红外辐射为0.012 W·Sr –1 ·m –2。这些原理证明装置为实现低尺寸,无铅的A 3 B 2 X 9钙钛矿光电技术提供了一条可行的途径。