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Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-10 , DOI: 10.1021/acsami.9b11146 Pratyush Buragohain , Adam Erickson , Pamenas Kariuki 1 , Terence Mittmann 1 , Claudia Richter 1 , Patrick D. Lomenzo 1 , Haidong Lu , Tony Schenk 1, 2 , Thomas Mikolajick 1 , Uwe Schroeder 1 , Alexei Gruverman
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-09-10 , DOI: 10.1021/acsami.9b11146 Pratyush Buragohain , Adam Erickson , Pamenas Kariuki 1 , Terence Mittmann 1 , Claudia Richter 1 , Patrick D. Lomenzo 1 , Haidong Lu , Tony Schenk 1, 2 , Thomas Mikolajick 1 , Uwe Schroeder 1 , Alexei Gruverman
Affiliation
Ferroelectric (FE) HfO2-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–voltage (P–V) loops along the voltage axis due to the development of an internal electric bias, which can lead to the failure of the writing and retention functions. Here, to gain insight into the mechanism of the imprint effect in La-doped HfO2 (La:HfO2) capacitors, we combine the pulse switching technique with high-resolution domain imaging by means of piezoresponse force microscopy. This approach allows us to establish a correlation between the macroscopic switching characteristics and domain time–voltage-dependent behavior. It has been shown that the La:HfO2 capacitors exhibit a much more pronounced imprint compared to Pb(Zr,Ti)O3-based FE capacitors. Also, in addition to conventional imprint, which evolves with time in the poled capacitors, an easily changeable imprint, termed as “fluid imprint”, with a strong dependence on the switching prehistory and measurement conditions, has been observed. Visualization of the domain structure reveals a specific signature of fluid imprint—continuous switching of polarization in the same direction as the previously applied field that continues a long time after the field was turned off. This effect, termed as “inertial switching”, is attributed to charge injection and subsequent trapping at defect sites at the film–electrode interface.
中文翻译:
铁电La:HfO2电容器中的流体压印和惯性转换
基于铁电(FE)HfO 2的薄膜被认为是存储设备应用中最有希望的材料系统之一,但对牢固的压印却表现出不利的趋势。印记的表现是由于内部电偏压的发展,极化电压(P – V)回路沿电压轴的移动,这可能导致写入和保留功能失败。在这里,可以深入了解La掺杂HfO 2(La:HfO 2)电容器,我们通过压电响应力显微镜将脉冲切换技术与高分辨率域成像相结合。这种方法使我们能够在宏观开关特性和与时域-电压相关的行为之间建立关联。已经表明,与Pb(Zr,Ti)O 3相比,La:HfO 2电容器具有更明显的烙印。的FE电容器。此外,除了在极性电容器中随时间变化的传统烙印外,还观察到了一种很容易改变的烙印,称为“流体烙印”,与开关史和测量条件密切相关。畴结构的可视化揭示了流体印记的特定特征-在与先前施加的电场相同的方向上连续极化转换,该电场在电场关闭后持续了很长时间。这种效应被称为“惯性转换”,归因于电荷注入以及随后在膜-电极界面缺陷部位的俘获。
更新日期:2019-09-10
中文翻译:
铁电La:HfO2电容器中的流体压印和惯性转换
基于铁电(FE)HfO 2的薄膜被认为是存储设备应用中最有希望的材料系统之一,但对牢固的压印却表现出不利的趋势。印记的表现是由于内部电偏压的发展,极化电压(P – V)回路沿电压轴的移动,这可能导致写入和保留功能失败。在这里,可以深入了解La掺杂HfO 2(La:HfO 2)电容器,我们通过压电响应力显微镜将脉冲切换技术与高分辨率域成像相结合。这种方法使我们能够在宏观开关特性和与时域-电压相关的行为之间建立关联。已经表明,与Pb(Zr,Ti)O 3相比,La:HfO 2电容器具有更明显的烙印。的FE电容器。此外,除了在极性电容器中随时间变化的传统烙印外,还观察到了一种很容易改变的烙印,称为“流体烙印”,与开关史和测量条件密切相关。畴结构的可视化揭示了流体印记的特定特征-在与先前施加的电场相同的方向上连续极化转换,该电场在电场关闭后持续了很长时间。这种效应被称为“惯性转换”,归因于电荷注入以及随后在膜-电极界面缺陷部位的俘获。