High‐Performance Proximity Sensors with Nanogroove‐Template‐Enhanced Extended‐Gate Field‐Effect Transistor Configuration,Advanced Electronic Materials

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High‐Performance Proximity Sensors with Nanogroove‐Template‐Enhanced Extended‐Gate Field‐Effect Transistor Configuration
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-08-27 , DOI: 10.1002/aelm.201900586
Weilin Liu ₁ , Yixue Niu ₁ , Qiusong Chen ₁ , Hanxiao Jiang ₁ , Fan Xu ₁ , Guodong Zhu _{1,

2}

Affiliation

In recent years human–machine interaction has become increasingly important in industrial applications and daily life. Proximity sensors are expected to become an important part of such systems. The mechanisms of these sensors are usually based on ultrasound, capacitance, triboelectric effect, optical imaging or semiconducting devices. The fabrication and sensing performance of solution‐based organic transistor proximity sensors is reported. To enhance electrical performance, nanogroove templates are introduced to guide the oriented growth of organic semiconducting layer. The templates are realized by friction‐transferring polytetrafluoroethylene thin layers onto SiO₂/Si substrates. An extended gate structure for proximity sensing is designed, in which one end of a silver wire is electrically connected with the gate of the transistor and the other end serves as the sensing end. Proximity sensing is characterized by bringing various charged stimuli close to the sensor and recording the resulting change in drain current. The sensor showed good repeatability during the approach and withdrawal of a stimulus. A maximum current response of 2.2 μA between distances of 3 mm and 53 mm and distance sensitivity of 2.5 nA mm^‐1 at a distance of 13 mm are obtained when a charged polytetrafluoroethylene rod is moved up and down above the sensing end.

中文翻译：

具有纳米槽模板增强型扩展门场效应晶体管配置的高性能接近传感器

近年来，人机交互在工业应用和日常生活中变得越来越重要。接近传感器有望成为此类系统的重要组成部分。这些传感器的机制通常基于超声，电容，摩擦电效应，光学成像或半导体器件。报告了基于解决方案的有机晶体管接近传感器的制造和传感性能。为了增强电性能，引入了纳米沟槽模板以指导有机半导体层的定向生长。通过将聚四氟乙烯薄层摩擦转移到SiO ₂上来实现模板/ Si基板。设计了一种用于接近感测的扩展栅极结构，其中，银线的一端与晶体管的栅极电连接，另一端用作感测端。接近感应的特点是使各种带电刺激靠近传感器并记录所产生的漏极电流变化。在接近和撤消刺激过程中，传感器显示出良好的可重复性。当带电的聚四氟乙烯棒在传感端上方上下移动时，在3 mm和53 mm的距离之间的最大电流响应为2.2μA，在13 mm的距离处的灵敏度为2.5 nA mm ^-1。

更新日期：2019-12-05

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