High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering,Journal of Materials Chemistry C

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High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2019-08-26 , DOI: 10.1039/c9tc03613j
Shun Han _{1,

2,

3,

4,

5} , Xiaoling Huang _{1,

2,

3,

4,

5} , Mingzhi Fang _{1,

2,

3,

4,

5} , Weiguo Zhao _{1,

2,

3,

4,

5} , Shijie Xu _{6,

7,

8} , Deliang Zhu _{1,

2,

3,

4,

5} , Wangying Xu _{1,

2,

3,

4,

5} , Ming Fang _{1,

2,

3,

4,

5} , Wenjun Liu _{1,

2,

3,

4,

5} , Peijiang Cao _{1,

2,

3,

4,

5} , Youming Lu _{1,

2,

3,

4,

5}

Affiliation

Room-temperature-fabricated amorphous Ga₂O₃ is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology in multiple areas. The UV detection characteristics of room-temperature deposited amorphous Ga₂O₃ thin films fabricated by a simple RF magnetron sputtering method were studied, and the deposition Ar pressure of an a-Ga₂O₃ thin film was varied to determine the mechanism underlying high-performance UV detection and to develop an ideal a-Ga₂O₃ thin film for UV detection. A high-response amorphous Ga₂O₃-based UV detector was made at 0.5 Pa, and the maximum response of the device reached 436.3 A W⁻¹ under 240 nm UV light with a 25 V bias voltage, which is near the maximum values for a single-crystal β-Ga₂O₃ material deposited at a high temperature. An amorphous Ga₂O₃-based UV detector with a low I_dark noise level (4.9 nA at 25 V) and a high I_uv/I_dark ratio (107314.4) was made at 1.2 Pa, and the I_uv/I_dark ratio of the device was near that of a UV detector based on single-crystal β-Ga₂O₃ with a complex metal-oxide–semiconductor field-effect transistor (MOSFET) structure. Through a comparative analysis of the electrical characteristics and the gain mechanism within amorphous Ga₂O₃ thin films deposited at different Ar pressures, the high UV response of the amorphous Ga₂O₃ detector at 0.5 Pa is found to mainly result from the quasi-Zener tunneling multiplication phenomenon between different resistance components. The low I_dark value and the high signal-to-noise ratio of the amorphous Ga₂O₃-based detector deposited at 1.2 Pa were mainly due to more high-resistance components and a relatively higher tunneling gain in the device. In addition, the amorphous Ga₂O₃-based detectors showed a much shorter response time (0.08 μs for the device deposited at 0.65 Pa) and recovery time (t_d1 = 0.21 ms, t_d2 = 5.88 ms for the device deposited at 1.2 Pa) than the reported crystal semiconductor-based devices and multiple complex structure devices. Thus, the room-temperature-fabricated amorphous Ga₂O₃ thin film could quickly and effectively detect a faint UV light signal in the presence of a very noisy background, which is extremely important in the applications of UV detectors in wearable, flexible photoelectronic devices.

中文翻译：

基于射频磁控溅射的室温沉积非晶Ga ₂ O ₃薄膜的高性能紫外线检测器

室温制造的非晶态Ga ₂ O ₃是一种廉价且高度灵敏的材料，适用于高性能太阳盲紫外线（UV）（220-280 nm）检测器，鉴于太阳盲UV光电电子的广泛使用，这种材料非常有用多个领域的技术。研究了通过简单的射频磁控溅射法制备的室温沉积非晶态Ga ₂ O ₃薄膜的紫外检测特性，并改变了a-Ga ₂ O ₃薄膜的沉积Ar压力，从而确定了高温下形成非晶态Ga ₂ O ₃的机理。性能的紫外线检测并开发出理想的a-Ga ₂ O ₃用于紫外线检测的薄膜。在0.5 Pa下制作了一个高响应性，基于非晶Ga ₂ O ₃的UV检测器，在240 nm UV光和25 V偏置电压下，该器件的最大响应达到436.3 AW ^-1，接近于25 V的最大值。单晶的β-Ga ₂ ö ₃材料沉积在高温下。在1.2 Pa下制作了具有低I_暗噪声水平（25 V时为4.9 nA）和高I _uv / I_暗比（107314.4）的基于Ga ₂ O ₃的非晶态UV检测器，I _uv / I_暗该装置的比为接近基于单晶的β-Ga一个UV检测器的那个₂ ö ₃用的复合金属氧化物半导体场效应晶体管（MOSFET）结构。通过对在不同Ar压力下沉积的非晶Ga ₂ O ₃薄膜中的电学特性和增益机理的比较分析，发现非晶Ga ₂ O ₃检测器在0.5 Pa时的高UV响应主要是由于准量子点引起的。不同电阻元件之间的齐纳隧穿倍增现象。非晶态Ga ₂ O ₃的低I_暗值和高信噪比沉积在1.2 Pa的基于探测器的探测器主要是由于更多的高电阻组件和器件中相对较高的隧穿增益。此外，基于非晶Ga ₂ O ₃的检测器显示出更短的响应时间（对于在0.65 Pa下沉积的器件为0.08μs）和恢复时间（对于在1.25下沉积的器件的t _d1 = 0.21 ms，t _d2 = 5.88 ms Pa）比所报道的基于晶体半导体的器件和多种复杂结构的器件。因此，室温制造的非晶态Ga ₂ O ₃ 薄膜可以在非常嘈杂的背景下快速有效地检测到微弱的紫外线信号，这在可穿戴，柔性光电设备中紫外线检测器的应用中极为重要。

更新日期：2019-10-03

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