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Spontaneous Interface Ion Exchange: Passivating Surface Defects of Perovskite Solar Cells with Enhanced Photovoltage
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2019-08-25 , DOI: 10.1002/aenm.201902142 Zhipeng Li 1 , Li Wang 2 , Ranran Liu 2 , Yingping Fan 2 , Hongguang Meng 1 , Zhipeng Shao 1 , Guanglei Cui 1 , Shuping Pang 1
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2019-08-25 , DOI: 10.1002/aenm.201902142 Zhipeng Li 1 , Li Wang 2 , Ranran Liu 2 , Yingping Fan 2 , Hongguang Meng 1 , Zhipeng Shao 1 , Guanglei Cui 1 , Shuping Pang 1
Affiliation
Interface engineering is of great concern in photovoltaic devices. For the solution‐processed perovskite solar cells, the modification of the bottom surface of the perovskite layer is a challenge due to solvent incompatibility. Herein, a Cl‐containing tin‐based electron transport layer; SnOx‐Cl, is designed to realize an in situ, spontaneous ion‐exchange reaction at the interface of SnOx‐Cl/MAPbI3. The interfacial ion rearrangement not only effectively passivates the physical contact defects, but, at the same time, the diffusion of Cl ions in the perovskite film also causes longitudinal grain growth and further reduces the grain boundary density. As a result, an efficiency of 20.32% is achieved with an extremely high open‐circuit voltage of 1.19 V. This versatile design of the underlying carrier transport layer provides a new way to improve the performance of perovskite solar cells and other optoelectronic devices.
中文翻译:
自发的界面离子交换:具有增强的光电压的钙钛矿型太阳能电池的钝化表面缺陷
接口工程是光伏设备中非常关注的问题。对于固溶钙钛矿太阳能电池而言,由于溶剂不兼容,钙钛矿层底部表面的改性是一项挑战。这里是含氯的锡基电子传输层;SnO x‐ Cl旨在在SnO x‐ Cl / MAPbI 3的界面上实现原位自发离子交换反应。界面离子重排不仅有效地钝化了物理接触缺陷,而且同时,钙离子在钙钛矿膜中的扩散还引起纵向晶粒长大,并进一步降低了晶界密度。结果,在1.19 V的极高开路电压下,效率达到20.32%。底层载流子传输层的这种通用设计为改善钙钛矿太阳能电池和其他光电器件的性能提供了一种新途径。
更新日期:2019-10-10
中文翻译:
自发的界面离子交换:具有增强的光电压的钙钛矿型太阳能电池的钝化表面缺陷
接口工程是光伏设备中非常关注的问题。对于固溶钙钛矿太阳能电池而言,由于溶剂不兼容,钙钛矿层底部表面的改性是一项挑战。这里是含氯的锡基电子传输层;SnO x‐ Cl旨在在SnO x‐ Cl / MAPbI 3的界面上实现原位自发离子交换反应。界面离子重排不仅有效地钝化了物理接触缺陷,而且同时,钙离子在钙钛矿膜中的扩散还引起纵向晶粒长大,并进一步降低了晶界密度。结果,在1.19 V的极高开路电压下,效率达到20.32%。底层载流子传输层的这种通用设计为改善钙钛矿太阳能电池和其他光电器件的性能提供了一种新途径。