High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors,ACS Photonics

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High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors
ACS Photonics ( IF 6.5 ) Pub Date : 2019-08-22 00:00:00 , DOI: 10.1021/acsphotonics.9b01050
Menglu Chen ₁ , Xinzheng Lan ₁ , Xin Tang ₁ , Yuanyuan Wang ₁ , Margaret H. Hudson ₁ , Dmitri V. Talapin ₁ , Philippe Guyot-Sionnest ₁

Affiliation

Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusting the HgCl₂ concentration in the ligand exchange process. We compare the photoconductive properties with the prior “solid-state ligand exchange” using ethanedithiol, and we find that the new process affords a ∼100-fold increase of the electron and hole mobility, a ∼100-fold increase in responsivity, and a ∼10-fold increase in detectivity. These photodetector improvements are primarily attributed to the increase in mobility (μ) because the optical properties are mostly unchanged. We show that the specific detectivity (D*) of a photoconductive device is expected to scale as

. The application potential is further verified by long-term device stability.

中文翻译：

HgTe量子点固体中的高载流子迁移率改善了中红外光电探测器

使用混合配体交换和极性相转移，实现了基于胶体HgTe量子点的改进的中红外光电导体。也可以通过在配体交换过程中调节HgCl _2的浓度来控制n和p的掺杂。我们将光导性能与先前使用乙二硫醇进行的“固态配体交换”进行了比较，发现新工艺使电子和空穴迁移率提高了约100倍，响应度提高了约100倍，并且侦查率提高约10倍。这些光电探测器的改进主要归因于迁移率（μ）的增加，因为光学特性几乎没有变化。我们表明，光电导器件的比检测率（D *）有望按比例缩放

。长期的设备稳定性进一步验证了其应用潜力。

更新日期：2019-08-22

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