Quantifying the Interface Defect for the Stability Origin of Perovskite Solar Cells,Advanced Energy Materials

当前位置： X-MOL 学术 › Adv. Energy Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Quantifying the Interface Defect for the Stability Origin of Perovskite Solar Cells
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2019-08-20 , DOI: 10.1002/aenm.201901352
Jionghua Wu _{1,

2} , Jiangjian Shi _{1,

3} , Yiming Li _{1,

2} , Hongshi Li _{1,

2} , Huijue Wu ₁ , Yanghong Luo _{1,

2,

3} , Dongmei Li _{1,

2,

3} , Qingbo Meng _{1,

2,

3,

4}

Affiliation

The stability issue that is obstructing commercialization of the perovskite solar cell is widely recognized, and tremendous effort has been dedicated to solving this issue. However, beyond the apparent thermal and moisture stability, more intrinsic semiconductor mechanisms regarding defect behavior have yet to be explored and understood. Herein, defects are quantified; especially interface defects, within the cell to reveal their impact on device performance and especially stability. Both the bulk and interface defects are distinguished and traced in situ using an expanded admittance model when the cell degrades in its efficiency under illumination or voltage. The electric field‐induced interface, rather than bulk defects, is found to have a direct correlation to stability. Releasing the interface strain using a fullerene derivative is an effective way to suppress interface defect formation and improve stability. Overall, this work provides a quantitative approach to probing the semiconductor mechanism behind the stability issue, and the inherent correlation discovered here among the electric field, interface strain, interface defects, and cell stability has important implications for ongoing device stability engineering.

中文翻译：

量化钙钛矿型太阳能电池稳定起源的界面缺陷

阻碍钙钛矿太阳能电池商业化的稳定性问题已得到广泛认可，并且为解决这个问题已付出了巨大的努力。但是，除了表观的热稳定性和湿气稳定性之外，还需要探索和理解关于缺陷行为的更多固有半导体机制。在此，缺陷被量化；尤其是界面缺陷，以揭示其对器件性能以及稳定性的影响。当电池在光照或电压下效率降低时，可以使用扩展的导纳模型来识别和跟踪体缺陷和界面缺陷。发现电场引起的界面而不是整体缺陷与稳定性直接相关。使用富勒烯衍生物释放界面应变是抑制界面缺陷形成并提高稳定性的有效方法。总的来说，这项工作提供了一种定量方法来探究稳定性问题背后的半导体机制，并且在电场，界面应变，界面缺陷和电池稳定性之间发现的内在关联性对正在进行的设备稳定性工程具有重要意义。

更新日期：2019-08-20

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南