Ultrathin Topological Insulator Absorber: Unique Dielectric Behavior of Bi2Te3 Nanosheets Based on Conducting Surface States,ACS Applied Materials & Interfaces

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Ultrathin Topological Insulator Absorber: Unique Dielectric Behavior of Bi2Te3 Nanosheets Based on Conducting Surface States
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-08-20 00:00:00 , DOI: 10.1021/acsami.9b13775
Min Tang ₁ , Jun-Ying Zhang ₁ , Song Bi ₂ , Zhi-Ling Hou ₁ , Xiao-Hong Shao ₁ , Ke-Tao Zhan ₁ , Mao-Sheng Cao ₃

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Topological insulators exhibit great potential in the fields of electronics and semiconductors for their gapless surface states. Intriguingly, most topological insulators are possibly excellent microwave-absorbing materials because of easy adjustment of electrical transport based on conducting surface states in the nanostructure. Herein, topological insulator Bi₂Te₃ nanosheets are synthesized by a simple solvothermal method. The material demonstrates a unique dielectric behavior based on conducting surface states, resulting in excellent microwave-absorbing performance. Benefiting from the outstanding impedance matching, Bi₂Te₃ nanosheets exhibit an ultrathin microwave absorption with the qualified frequency bandwidth of 3.0 GHz at only 0.77 mm thickness, which is thinner than other absorbers in reported references. Moreover, a strong reflection loss of −41 dB at 0.8 mm is achieved. The result provides a new approach for developing ultrathin microwave absorption materials at the submillimeter scale.

中文翻译：

超薄拓扑绝缘体吸收剂：Bi ₂ Te ₃纳米片基于导电表面态的独特介电行为

拓扑绝缘体因其无间隙的表面状态而在电子和半导体领域显示出巨大的潜力。有趣的是，大多数拓扑绝缘体可能是出色的微波吸收材料，因为可以根据纳米结构中的导电表面状态轻松调节电传输。在此，通过简单的溶剂热法合成拓扑绝缘体Bi ₂ Te ₃纳米片。该材料显示出基于导电表面态的独特介电性能，从而具有出色的微波吸收性能。受益于出色的阻抗匹配Bi ₂ Te ₃纳米片表现出超薄的微波吸收性能，仅在0.77 mm的厚度下具有3.0 GHz的合格频率带宽，比报道的参考文献中的其他吸收剂更薄。此外，在0.8 mm处实现了-41 dB的强反射损耗。该结果为开发亚毫米级超薄微波吸收材料提供了一种新方法。

更新日期：2019-08-20

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