The integration of GaN-based light-emitting diodes (LEDs) onto flexible platforms provides opportunities for conformal lighting, wearable electronics, and bendable displays. While this technology may enhance the functionality of the light source, the development of flexible GaN LEDs suffers from performance degradation, when mechanical bending is applied during operation. A unique approach to eliminate the degradation employs dot-in-wire structures, using cylindrical light-emitting heterostructures that protrude above the flexible platform, separating the active light-emitting region from the bending substrate. Here, we demonstrate the optical enhancement of nanowire light emitters by changing the geometric orientation within a 1 × 1 mm² array of nanowires on a flexible platform through bending of the substrate platform. The flexible structures were achieved by transferring GaN nanowire LEDs from sapphire substrates onto flexible polyethylene terephthalate (PET) using a “paste-and-cut” integration process. The I–V characteristics of the nanowire LEDs showed negligible change after integration onto the PET, with a turn-on voltage of 2.5 V and a forward current of 400 μA at 4 V. A significant advantage for the nanowire devices on PET was demonstrated by tilting the LEDs through substrate bending that increased the electroluminescence (EL) intensity, while the I–V characteristics and the EL peak position remained constant. Through finite-element analysis and three-dimensional finite-difference time-domain modeling, it was determined that tilting the protruding devices changed the effective distance between the structures, enhancing their electromagnetic coupling to increase light output without affecting the electrical properties or peak emission wavelength of the LEDs.

将GaN基发光二极管（LED）集成到灵活的平台上，为保形照明，可穿戴电子设备和可弯曲显示器提供了机会。尽管此技术可以增强光源的功能，但在操作过程中施加机械弯曲时，柔性GaN LED的开发会遭受性能下降的困扰。消除退化的一种独特方法是采用线内点状结构，该结构使用突出于柔性平台上方的圆柱形发光异质结构，从而将活动的发光区域与弯曲的基板分开。在这里，我们通过改变1×1 mm ²内的几何方向来演示纳米线发光体的光学增强通过弯曲衬底平台将纳米线阵列排列在柔性平台上。通过使用“粘贴并切割”集成工艺将GaN纳米线LED从蓝宝石衬底转移到柔性聚对苯二甲酸乙二醇酯（PET）上，从而实现了柔性结构。集成到PET上后，纳米线LED的I–V特性变化可忽略不计，其开启电压为2.5 V，正向电流为4 V时为400μA。通过基板弯曲使LED倾斜以增加电致发光（EL）强度，而I–V特性和EL峰值位置保持恒定。通过有限元分析和时域三维有限差分建模，