当前位置:
X-MOL 学术
›
Adv. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019)
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-08-08 , DOI: 10.1002/aelm.201970038
Lin Wang , Li Chen , Swee Liang Wong , Xin Huang , Wugang Liao , Chunxiang Zhu , Yee‐Fun Lim , Dabing Li , Xinke Liu , Dongzhi Chi , Kah‐Wee Ang
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-08-08 , DOI: 10.1002/aelm.201970038
Lin Wang , Li Chen , Swee Liang Wong , Xin Huang , Wugang Liao , Chunxiang Zhu , Yee‐Fun Lim , Dabing Li , Xinke Liu , Dongzhi Chi , Kah‐Wee Ang
![]() |
In article number 1900393, Xinke Liu, Dongzhi Chi, Kah‐Wee Ang, and co‐workers report the demonstration of diverse electronic building blocks including field‐effect transistors, logic gates, and memristors. These building blocks are based upon wafer‐scale monolayer MoS2 synthesized via a scalable chemical vapor deposition technique. By virtue of a fully complementary metal‐oxide‐semiconductor‐compatible fabrication process, this work paves the way toward unleashing the potential of atomically thin MoS2 for practical next‐generation ultrathin electronics.
中文翻译:
2D电子产品:基于晶片级多晶单层MoS2的化学气相沉积电子设备和电路(Adv。Electron Mater。8/2019)
在第1900393号文章中,刘新科,池东之,昂卡赫(Ang Kah-Wee Ang)及其同事报告了包括场效应晶体管,逻辑门和忆阻器在内的各种电子构建块的演示。这些构件基于通过可扩展的化学气相沉积技术合成的晶圆级单层MoS 2。通过完全互补的金属氧化物半导体兼容制造工艺,这项工作为释放原子上薄的MoS 2在实际的下一代超薄电子产品中的潜力铺平了道路。
更新日期:2019-08-08

中文翻译:

2D电子产品:基于晶片级多晶单层MoS2的化学气相沉积电子设备和电路(Adv。Electron Mater。8/2019)
在第1900393号文章中,刘新科,池东之,昂卡赫(Ang Kah-Wee Ang)及其同事报告了包括场效应晶体管,逻辑门和忆阻器在内的各种电子构建块的演示。这些构件基于通过可扩展的化学气相沉积技术合成的晶圆级单层MoS 2。通过完全互补的金属氧化物半导体兼容制造工艺,这项工作为释放原子上薄的MoS 2在实际的下一代超薄电子产品中的潜力铺平了道路。
