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2D Optoelectronics: High‐Performance Monolayer MoS2 Films at the Wafer Scale by Two‐Step Growth (Adv. Funct. Mater. 32/2019)
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2019-08-06 , DOI: 10.1002/adfm.201970224 Xiangming Xu 1 , Gobind Das 2 , Xin He 1 , Mohamed Nejib Hedhili 2 , Enzo Di Fabrizio 3 , Xixiang Zhang 1 , Husam N. Alshareef 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2019-08-06 , DOI: 10.1002/adfm.201970224 Xiangming Xu 1 , Gobind Das 2 , Xin He 1 , Mohamed Nejib Hedhili 2 , Enzo Di Fabrizio 3 , Xixiang Zhang 1 , Husam N. Alshareef 1
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In article number 1901070, Husam N. Alshareef and co‐workers successfully develop an epitaxial phase conversion process to make continuous and homogeneous monolayer MoS2 films at the wafer scale. The process was enabled by careful epitaxial growth of MoO2 and a subsequent sulfurization process. The resulting epitaxial films exhibit high‐performance excitonic and electronic properties that can be engineered during the growth process.
中文翻译：
二维光电：两步法在晶圆级的高性能单层MoS2薄膜（Adv。Funct。Mater。32/2019）
Husam N. Alshareef及其同事在文章编号1901070中成功开发了一种外延相转化工艺，以在晶圆级生产连续且均匀的单层MoS 2薄膜。通过小心地外延生长MoO 2和随后的硫化过程，可以实现该过程。所得的外延膜具有高性能的激子和电子特性，可以在生长过程中进行设计。
更新日期：2019-08-06
中文翻译：
二维光电：两步法在晶圆级的高性能单层MoS2薄膜（Adv。Funct。Mater。32/2019）
Husam N. Alshareef及其同事在文章编号1901070中成功开发了一种外延相转化工艺，以在晶圆级生产连续且均匀的单层MoS 2薄膜。通过小心地外延生长MoO 2和随后的硫化过程，可以实现该过程。所得的外延膜具有高性能的激子和电子特性，可以在生长过程中进行设计。
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