Inorganic n-type metal oxide materials, i.e., ZnO have been developed and employed as interface layers for energy level matching and electron transport in order to achieve high performance perovskites based optoelectronic devices. In this work, we successfully apply atomic layer deposition (ALD) technique to deposit ZnO directly on top of CsPbBr₃ to serve as the electron transport layer. A regular perovskite light emitting diode (PeLED) in a configuration of glass/ITO/PEDOT:PSS/CsPbBr₃/ZnO/Ag was fabricated. In the CsPbBr₃ emitting layer, polyethyleneimine ethoxylated (PEIE) dissolved in an anti-solvent chlorobenzene (CB) was introduced to assist the nucleation and crystal growth of perovskite films, as well as providing surface reactive sites for ALD deposition of ZnO layer particularly. The ALD deposition temperature on the growth, crystallinity and morphology of ZnO and subsequent device performance was investigated. We obtained PeLEDs of the best performance with the best current and external quantum efficiency (EQE) of 0.49 cd/A and 0.14%, respectively, which is as 14 folds high as an inorganic CsPbBr₃ device using F8 as the electron transport layer reported previously.

为了获得基于钙钛矿的高性能光电器件，已经开发了无机n型金属氧化物材料（即ZnO）并将其用作界面层以进行能级匹配和电子传输。在这项工作中，我们成功地应用了原子层沉积（ALD）技术将ZnO直接沉积在CsPbBr _3的顶部以用作电子传输层。制成玻璃/ ITO / PEDOT：PSS / CsPbBr ₃ / ZnO / Ag构造的普通钙钛矿发光二极管（PeLED）。在CsPbBr _3中发射层中，引入了溶于反溶剂氯苯（CB）中的聚乙烯亚胺乙氧基化（PEIE）以帮助钙钛矿薄膜的成核和晶体生长，并特别为ALD沉积ZnO层提供表面反应部位。研究了ALD沉积温度对ZnO的生长，结晶度和形貌以及后续器件性能的影响。我们获得了性能最佳的PeLED，分别具有0.49 cd / A和0.14％的最佳电流和最佳外部量子效率（EQE），是使用F8作为先前报道的电子CsPbBr ₃无机器件的14倍。。