Abstract Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

中文翻译：

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使用 CVD 生长的 MoS 2 /WS 2 异质结构增强晶体管的光响应特性

摘要 基于过渡金属二硫属元素化物的半导体异质结构为研究二维纳米材料和设计原子级薄器件提供了广阔的平台，以满足基础和应用的兴趣。在我们的研究中，通过化学气相沉积 (CVD) 在 SiO2/Si 衬底上制备了 MoS2/WS2 异质结构。并且异质结构的光学性质通过拉曼和光致发光（PL）光谱表征。测试了 MoS2/WS2 异质结构中 PL 强度的类似 2 个数量级下降，这是由于电和光调制效应与 MoS2 和 WS2 薄膜之间的界面电荷转移有关。使用 MoS2/WS2 异质结构作为光电晶体管的沟道材料，我们证明了多层 MoS2 场效应晶体管的光响应性提高了 50 倍以上。结果表明，MoS2/WS2 薄膜是一种很有前途的异质结构材料，可以增强基于 MoS2 的光电晶体管的光响应特性。