We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.

我们提出了一种针对太赫兹 (THz) 辐射的高效肖特基二极管检测方案，该方案在碳化硅 (SiC) 上的外延石墨烯材料系统上实现。它采用碳化硅作为半导体，石墨烯作为金属，具有外延定义的界面。对于第一个原型，我们报告了高达 580 GHz 的宽带运行，仅受 RC 电路限制，响应率为 1.1 A/W。值得注意的是，太赫兹响应度的电压依赖性与直流响应度没有偏差，这鼓励使用这种透明器件来探索光学领域肖特基整流的高频极限。通过在太赫兹传输实验中解析乙醇和丙酮的尖锐光谱特征，证明了探测器的性能。