Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.,The Journal of Physical Chemistry Letters

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Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2019-08-16 , DOI: 10.1021/acs.jpclett.9b01961
Tao Chen _{1,

2} , Degong Ding ₃ , Jia Shi _{4,

5} , Guang Wang ₆ , Liangzhi Kou ₇ , Xiaoming Zheng ₆ , Xibiao Ren ₃ , Xinfeng Liu ₄ , Chuanhong Jin _{2,

3} , Jianxin Zhong ₁ , Guolin Hao _{1,

2}

Affiliation

Atomically thin transition-metal dichalcogenide (TMDC) heterostructures have attracted increasing attention because of their unprecedented potential in the fields of electronics and optoelectronics. However, selective growth of either lateral or vertical TMDC heterostructures remains challenging. Here, we report that lateral and vertical MoS2/MoSe2 epitaxial heterostructures can be successfully fabricated via a one-step growth strategy, which includes triggering by the concentration of sulfur precursor vapor and a high-temperature annealing process. Vertically stacked MoS2/MoSe2 heterostructures can be synthesized via control of the nucleation and growth kinetics, which is induced by high sulfur vapor concentration. The high-temperature annealing process results in the formation of fractured MoSe2 and in situ epitaxial growth of lateral MoSe2-MoS2 heterostructures. This study has revealed the importance of sulfur vapor concentration and high-temperature annealing processes in the controllable growth of MoSe2-MoS2 heterostructures, paving a new route for fabricating two-dimensional TMDC heterostructures.

中文翻译：

通过外延生长的横向和垂直MoSe2-MoS2异质结构：由高温退火和前体浓度触发。

原子薄的过渡金属二硫化氢（TMDC）异质结构由于在电子和光电子领域的空前潜力而受到越来越多的关注。但是，横向或垂直TMDC异质结构的选择性生长仍然具有挑战性。在这里，我们报告可以通过一步生长策略成功地制造横向和纵向MoS2 / MoSe2外延异质结构，该策略包括通过硫前驱物蒸气的浓度触发和高温退火过程。垂直堆叠的MoS2 / MoSe2异质结构可以通过控制成核和生长动力学来合成，这是由高硫蒸气浓度引起的。高温退火过程导致断裂的MoSe2的形成和MoSe2-MoS2横向异质结构的原位外延生长。这项研究揭示了硫蒸气浓度和高温退火过程在MoSe2-MoS2异质结构的可控生长中的重要性，为制造二维TMDC异质结构开辟了一条新途径。

更新日期：2019-07-30

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