GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n⁺-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.

中文翻译：

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具有多孔AlGaN分布布拉格反射器的紫外GaN基光电二极管中的光子回收

演示了具有多孔分布式布拉格反射器（DBR）结构的GaN基紫外光电二极管。已经通过电化学蚀刻工艺将具有高折射率的n ⁺ -AlGaN：Si外延层蚀刻为具有低折射率的多孔AlGaN层。在355nm处测量响应光谱的峰值波长，其与多孔反射器的高反射波长区域匹配。由于谐振腔结构中的光循环过程，在具有多孔AlGaN反射器的GaN光电二极管中测量到高光电流和大UV /可见光抑制比。