Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS₂) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W⁻¹ and detectivity over 10¹³ Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.

二维 (2D) 半导体中的铁电工程 pn 掺杂在以可重新配置的方式实现定制功能器件方面具有重要前景。在这里，我们报告了通过局部图案化铁电极化在二硫化钼 (MoS2) 光电器件中成功进行 pn 掺杂，并将其配置为横向二极管和 npn 双极光电晶体管，用于从这样一个多功能游乐场进行光电检测_。以这种方式形成的横向 pn 二极管通过分离约 12% 的光生电子和空穴来实现高效的自供电检测。当极化为双极光电晶体管时，该器件通过其晶体管动作定制增益~1000，达到~12 A W ^-1的响应度和超过10 ¹³ Jones 的探测率，同时保持20 μs 内的快速响应速度。因此，基于局域铁电极化耦合二维半导体开辟了一条通往高性能光电子学的有前途的途径。