We report gallium arsenide (GaAs) growth rates exceeding 300 µm h⁻¹ using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demonstrate gallium indium phosphide growth at rates exceeding 200 µm h⁻¹ using similar growth conditions. We grew GaAs solar cell devices by incorporating the high growth rate of GaAs and evaluated its material quality at these high rates. Solar cell growth rates ranged from 35 to 309 µm h⁻¹ with open circuit voltages ranging from 1.04 to 1.07 V. The best devices exceeded 25% efficiency under the AM1.5 G solar spectrum. The high open-circuit voltages indicate that high material quality can be maintained at these extremely high growth rates. These results have strong implications toward lowering the deposition cost of III-V materials potentially enabling the deposition of high efficiency devices in mere seconds.

我们报道了使用动态氢化物气相外延法得到的砷化镓（GaAs）的生长速率超过300 µm h ^-1。我们通过最大程度地提高镓到一氯化镓的转化效率，并利用具有快速动力学特性的受限于运输的生长机制来达到这些速率。我们还证明了在相似的生长条件下，磷化铟镓镓的生长速率超过200 µm h ^-1。我们通过结合高生长速率的砷化镓来生长砷化镓太阳能电池器件，并以此高速率评估其材料质量。太阳能电池的生长速率范围为35至309 µm h ^-1开路电压范围为1.04至1.07V。最佳器件在AM1.5 G太阳光谱下的效率超过25％。高开路电压表明可以在这些极高的增长率下保持较高的材料质量。这些结果对降低III-V材料的沉积成本具有重要意义，可能在短短几秒钟内沉积出高效率的器件。