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Ultrathin Free-Standing Nanosheets of Bi2O2Se: Room Temperature Ferroelectricity in Self-Assembled Charged Layered Heterostructure
Nano Letters ( IF 9.6 ) Pub Date : 2019-07-26 00:00:00 , DOI: 10.1021/acs.nanolett.9b02312 Tanmoy Ghosh 1 , Manisha Samanta 1 , Aastha Vasdev 2 , Kapildeb Dolui 3 , Jay Ghatak 4 , Tanmoy Das 5 , Goutam Sheet 2 , Kanishka Biswas 1, 4, 6
Nano Letters ( IF 9.6 ) Pub Date : 2019-07-26 00:00:00 , DOI: 10.1021/acs.nanolett.9b02312 Tanmoy Ghosh 1 , Manisha Samanta 1 , Aastha Vasdev 2 , Kapildeb Dolui 3 , Jay Ghatak 4 , Tanmoy Das 5 , Goutam Sheet 2 , Kanishka Biswas 1, 4, 6
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Ultrathin ferroelectric semiconductors with high charge carrier mobility are much coveted systems for the advancement of various electronic and optoelectronic devices. However, in traditional oxide ferroelectric insulators, the ferroelectric transition temperature decreases drastically with decreasing material thickness and ceases to exist below certain critical thickness owing to depolarizing fields. Herein, we show the emergence of an ordered ferroelectric ground state in ultrathin (∼2 nm) single crystalline nanosheets of Bi2O2Se at room temperature. Free-standing ferroelectric nanosheets, in which oppositely charged alternating layers are self-assembled together by electrostatic interactions, are synthesized by a simple, rapid, and scalable wet chemical procedure at room temperature. The existence of ferroelectricity in Bi2O2Se nanosheets is confirmed by dielectric measurements and piezoresponse force spectroscopy. The spontaneous orthorhombic distortion in the ultrathin nanosheets breaks the local inversion symmetry, thereby resulting in ferroelectricity. The local structural distortion and the formation of spontaneous dipole moment were directly probed by atomic resolution scanning transmission electron microscopy and density functional theory calculations.
中文翻译：
Bi 2 O 2 Se的超薄自由站立纳米片：自组装带电层状异质结构中的室温铁电。
具有高电荷载流子迁移率的超薄铁电半导体是人们梦vet以求的各种电子和光电子设备的发展体系。然而，在传统的氧化物铁电绝缘体中，铁电转变温度随着材料厚度的减小而急剧下降，并且由于去极化场而不再存在于一定的临界厚度以下。本文中，我们显示了Bi 2 O 2超薄（〜2 nm）单晶纳米片中有序铁电基态的出现。硒在室温下。在室温下，通过简单，快速和可扩展的湿化学程序合成了独立的铁电纳米片，其中带相反电荷的交替层通过静电相互作用自组装在一起。Bi 2 O 2 Se纳米片中铁电的存在已通过介电测量和压电响应力谱得到了证实。超薄纳米片中的自发正交畸变会破坏局部反型对称性，从而导致铁电性。原子分辨率扫描透射电子显微镜和密度泛函理论计算直接探测了局部结构变形和自发偶极矩的形成。
更新日期：2019-07-26
中文翻译：
Bi 2 O 2 Se的超薄自由站立纳米片：自组装带电层状异质结构中的室温铁电。
具有高电荷载流子迁移率的超薄铁电半导体是人们梦vet以求的各种电子和光电子设备的发展体系。然而，在传统的氧化物铁电绝缘体中，铁电转变温度随着材料厚度的减小而急剧下降，并且由于去极化场而不再存在于一定的临界厚度以下。本文中，我们显示了Bi 2 O 2超薄（〜2 nm）单晶纳米片中有序铁电基态的出现。硒在室温下。在室温下，通过简单，快速和可扩展的湿化学程序合成了独立的铁电纳米片，其中带相反电荷的交替层通过静电相互作用自组装在一起。Bi 2 O 2 Se纳米片中铁电的存在已通过介电测量和压电响应力谱得到了证实。超薄纳米片中的自发正交畸变会破坏局部反型对称性，从而导致铁电性。原子分辨率扫描透射电子显微镜和密度泛函理论计算直接探测了局部结构变形和自发偶极矩的形成。
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