当前位置：
X-MOL 学术
›
Adv. Opt. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Lateral Bilayer MoS2–WS2 Heterostructure Photodetectors with High Responsivity and Detectivity
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2019-07-26 , DOI: 10.1002/adom.201900815 Kun Ye 1 , Lixuan Liu 1, 2 , Yujie Liu 1 , Anmin Nie 1 , Kun Zhai 1 , Jianyong Xiang 1 , Bochong Wang 1 , Fusheng Wen 1 , Congpu Mu 1 , Zhisheng Zhao 1 , Yongji Gong 2 , Zhongyuan Liu 1 , Yongjun Tian 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2019-07-26 , DOI: 10.1002/adom.201900815 Kun Ye 1 , Lixuan Liu 1, 2 , Yujie Liu 1 , Anmin Nie 1 , Kun Zhai 1 , Jianyong Xiang 1 , Bochong Wang 1 , Fusheng Wen 1 , Congpu Mu 1 , Zhisheng Zhao 1 , Yongji Gong 2 , Zhongyuan Liu 1 , Yongjun Tian 1
Affiliation
|
2D heterostructures combining different layered semiconductors have received great interest due to their intriguing electrical and optical properties. However, the arbitrary growth of layers in a lateral heterostructure remains a challenge. Here, the synthesis of large‐scale lateral bilayer (LBL) WS2–MoS2 heterostructures is reported by a two‐step chemical vapor deposition route. Raman, photoluminescence, and second‐harmonic generation images show the sharp boundaries between WS2 and MoS2 domains in the heterostructure. Atomically resolved scanning transmission electron microscopy further reveals that sharp boundaries are formed by seamless connections via a lateral zigzag epitaxy between WS2 and MoS2. Notably, the photodetector device based on the LBL WS2–MoS2 heterostructure exhibits ultrahigh photoresponsivity and detectivity (6.72 × 103 A W−1 and 3.09 × 1013 Jones for 457 nm laser light, respectively), orders of magnitude higher than those of MoS2 and WS2 monocrystals. These excellent performances render LBL WS2–MoS2 heterostructures as promising candidates for next‐generation optoelectronics.
中文翻译：
具有高响应性和探测性的横向双层MoS2-WS2异质结构光电探测器
结合不同层状半导体的2D异质结构因其吸引人的电学和光学特性而引起了人们的极大兴趣。然而，横向异质结构中层的任意生长仍然是一个挑战。在此，通过两步化学气相沉积途径报道了大规模横向双层（LBL）WS 2 -MoS 2异质结构的合成。拉曼光谱，光致发光光谱和二次谐波图像显示了异质结构中WS 2和MoS 2域之间的清晰边界。原子分辨扫描透射电子显微镜进一步揭示了尖锐的边界是通过WS 2和MoS之间的横向之字形外延无缝连接而形成的2。值得注意的是，基于LBL WS 2 -MoS 2异质结构的光电检测器装置具有超高的光响应性和检测性（对于457 nm激光分别为6.72×10 3 AW -1和3.09×10 13 Jones），其数量级比MoS 2和WS 2单晶。这些出色的性能使LBL WS 2 –MoS 2异质结构成为下一代光电子技术的有希望的候选者。
更新日期：2019-10-21
中文翻译：
具有高响应性和探测性的横向双层MoS2-WS2异质结构光电探测器
结合不同层状半导体的2D异质结构因其吸引人的电学和光学特性而引起了人们的极大兴趣。然而，横向异质结构中层的任意生长仍然是一个挑战。在此，通过两步化学气相沉积途径报道了大规模横向双层（LBL）WS 2 -MoS 2异质结构的合成。拉曼光谱，光致发光光谱和二次谐波图像显示了异质结构中WS 2和MoS 2域之间的清晰边界。原子分辨扫描透射电子显微镜进一步揭示了尖锐的边界是通过WS 2和MoS之间的横向之字形外延无缝连接而形成的2。值得注意的是，基于LBL WS 2 -MoS 2异质结构的光电检测器装置具有超高的光响应性和检测性（对于457 nm激光分别为6.72×10 3 AW -1和3.09×10 13 Jones），其数量级比MoS 2和WS 2单晶。这些出色的性能使LBL WS 2 –MoS 2异质结构成为下一代光电子技术的有希望的候选者。
京公网安备 11010802027423号