Enhanced Performance of Perovskite Light-Emitting Diodes via Diamine Interface Modification,ACS Applied Materials & Interfaces

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Enhanced Performance of Perovskite Light-Emitting Diodes via Diamine Interface Modification
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-07-23 00:00:00 , DOI: 10.1021/acsami.9b11866
Lianqi Tang ₁ , Jingjing Qiu ₁ , Qi Wei ₂ , Hao Gu _{1,

3} , Bin Du ₁ , Haiyan Du ₁ , Wei Hui ₁ , Yingdong Xia ₁ , Yonghua Chen ₁ , Wei Huang _{1,

2,

4}

Affiliation

Interfacial engineering between charge transport layers and perovskite light-emitting layers has been applied as an effective strategy to enhance performance of perovskite light-emitting diodes (PeLEDs). Herein, we introduce a Lewis base diamine molecule [2,2-(ethylenedioxy)bis(ethylammonium), EDBE] to modify the interface between the ZnMgO electron transport layer (ETL) and perovskite light-emitting layer in PeLEDs. With two amino groups in EDBE, one amine can interact with ZnMgO beneath to tune the growth of perovskite films, resulting in improved electron injection and suppressed current leakage. Meanwhile, the other amine can passivate the surface trap states of the polycrystalline perovskite films, which would eliminate trap-mediated nonradiative recombination. An enhanced performance for near-infrared PeLEDs is achieved with external quantum efficiency from 9.15 to 12.35% after incorporating the EDBE interfacial layer. This work demonstrated that the introduction of Lewis base diamine molecules as the ETL/perovskite interfacial agent is a promising way for developing high-performance PeLEDs.

中文翻译：

通过二胺界面改性增强钙钛矿发光二极管的性能

电荷传输层与钙钛矿发光层之间的界面工程已被用作增强钙钛矿发光二极管（PeLEDs）性能的有效策略。本文中，我们引入了路易斯碱二胺分子[2,2-（亚乙二氧基）双（乙基铵），EDBE]来修饰PeLEDs中ZnMgO电子传输层（ETL）和钙钛矿发光层之间的界面。EDBE中有两个氨基，一种胺可以与下面的ZnMgO相互作用，从而调节钙钛矿膜的生长，从而改善电子注入并抑制电流泄漏。同时，另一种胺可以钝化多晶钙钛矿薄膜的表面陷阱态，这将消除陷阱介导的非辐射复合。掺入EDBE界面层后，外部量子效率从9.15到12.35％，可实现近红外PeLED的增强性能。这项工作表明，引入路易斯碱二胺分子作为ETL /钙钛矿界面剂是开发高性能PeLED的有前途的方法。

更新日期：2019-07-23

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