当前位置：
X-MOL 学术
›
Cryst. Growth Des.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Crystal Quality Improvement of α-Ga2O3 Growth on Stripe Patterned Template via Epitaxial Lateral Overgrowth
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2019-07-22 00:00:00 , DOI: 10.1021/acs.cgd.9b00454 Hoki Son 1, 2 , Ye-ji Choi 1 , Jun-Seok Ha 3 , Sung Hoon Jung 4 , Dae-Woo Jeon 1
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2019-07-22 00:00:00 , DOI: 10.1021/acs.cgd.9b00454 Hoki Son 1, 2 , Ye-ji Choi 1 , Jun-Seok Ha 3 , Sung Hoon Jung 4 , Dae-Woo Jeon 1
Affiliation
|
Among the Ga2O3 polymorphs, which are ultrawide-band-gap materials, α-Ga2O3 undergoes only heteroepitaxial growth and has been actively studied for producing high-quality thin films. However, attaining a high-quality film via heteroepitaxial growth is difficult owing to both the lattice mismatch between sapphire and Ga2O3 and the difference in their thermal expansion coefficients. To overcome this problem, epitaxial lateral overgrowth, which improves the quality of epitaxial growth, was employed to grow the α-Ga2O3 epilayer. In addition, samples grown along the [112̅0] and [11̅00] directions were compared by analyzing the X-ray rocking curve of the 0006 and 101̅4 diffractions to investigate the characteristics of lateral growth. The α-Ga2O3 grown via halide vapor phase epitaxy showed a relatively high lateral growth rate along the [11̅00] pattern direction. The full width at half-maximum of the 101̅4 diffraction of α-Ga2O3 grown along the [11̅00] direction was measured to be 757 arcsec, which was remarkably lower than that of conventionally grown α-Ga2O3.
中文翻译：
的晶体质量改进α-嘎2 ö 3经由侧向外延生长生长上条纹图案的模板
间中的Ga 2 Ó 3多晶型物，其是超宽频带的隙材料，α -镓2所ö 3仅经历异质外延生长，并已积极地研究用于生产高质量的薄膜。然而，由于蓝宝石和Ga 2 O 3之间的晶格失配以及它们的热膨胀系数的差异，通过异质外延生长获得高质量的膜是困难的。为了克服这个问题，外延横向过生长，这提高了外延生长的质量中，采用以生长α-嘎2 ö 3外延层。此外，通过分析0006和101̅4衍射的X射线摇摆曲线，比较了沿[112̅0]和[11̅00]方向生长的样品，以研究横向生长的特征。α-镓2 ö 3生长经由卤化物气相外延表明沿着[1100]方向图案相对高的横向生长速率。在一半最大值处的1014衍射α-Ga中的全宽2 ö 3沿[1100]方向上生长测定为757弧秒，这是显着地比传统方法种植的α-Ga中降低2 ö 3。
更新日期：2019-07-22
中文翻译：
的晶体质量改进α-嘎2 ö 3经由侧向外延生长生长上条纹图案的模板
间中的Ga 2 Ó 3多晶型物，其是超宽频带的隙材料，α -镓2所ö 3仅经历异质外延生长，并已积极地研究用于生产高质量的薄膜。然而，由于蓝宝石和Ga 2 O 3之间的晶格失配以及它们的热膨胀系数的差异，通过异质外延生长获得高质量的膜是困难的。为了克服这个问题，外延横向过生长，这提高了外延生长的质量中，采用以生长α-嘎2 ö 3外延层。此外，通过分析0006和101̅4衍射的X射线摇摆曲线，比较了沿[112̅0]和[11̅00]方向生长的样品，以研究横向生长的特征。α-镓2 ö 3生长经由卤化物气相外延表明沿着[1100]方向图案相对高的横向生长速率。在一半最大值处的1014衍射α-Ga中的全宽2 ö 3沿[1100]方向上生长测定为757弧秒，这是显着地比传统方法种植的α-Ga中降低2 ö 3。
京公网安备 11010802027423号