Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr0.52Ti0.48O3 Ferroelectric Film for Nonvolatile Memory,Advanced Electronic Materials

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Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr0.52Ti0.48O3 Ferroelectric Film for Nonvolatile Memory
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-07-22 , DOI: 10.1002/aelm.201900443
Changhong Yang ₁ , Yajie Han ₁ , Jin Qian ₁ , Zhenxiang Cheng ₂

Affiliation

Flexible memory devices represent an emerging technological goal for information storage and data processing in portable, wearable, and smart electronics that work in curved conditions. This work presents a direct and cost‐effective fabrication of a bendable PbZr_0.52Ti_0.48O₃ (PZT) ferroelectric memory element with a Pt bottom electrode layer and Au top electrodes on a flexible mica substrate. The polycrystalline PZT film with morphotropic phase boundary composition shows excellent electrical properties, reflected by superior ferroelectricity with a large remanent polarization (P_r ≈ 30 μC cm⁻²), good frequency stability (1–50 kHz), broad working temperature (25–200 °C), and excellent fatigue resistance (up to 10⁹). Most importantly, with the assistance of the flexible mica substrate and the individual bendability of each film layer, the all‐inorganic PZT ferroelectric film capacitor can be safely bent to a small bending radius of 2 mm with a bending strain of less than 0.3%, undergo repeated bending–releasing cycles for 10³ times where no obvious deterioration occurs in polarization, and show data retention of 10⁵ s, and fatigue resistance at 10⁹ switching cycles. This work is anticipated to advance the application potential of high‐performance flexible ferroelectric memories in next‐generation wearable electronic devices.

中文翻译：

用于非易失性存储器的柔性，温度稳定且耐疲劳的PbZr0.52Ti0.48O3铁电薄膜

柔性存储设备代表了在弯曲条件下工作的便携式，可穿戴和智能电子设备中信息存储和数据处理的新兴技术目标。这项工作提出了一种可弯曲的PbZr _0.52 Ti _0.48 O ₃（PZT）铁电存储元件的直接且经济高效的制造方法，该元件在柔性云母基板上具有Pt底部电极层和Au顶部电极。用同型相界组合物显示出多晶PZT膜优异的电性能，通过铁电性优越具有大的剩余极化（反射P _{- [R} ≈30μC厘米^-2），良好的频率稳定性（1–50 kHz），较宽的工作温度（25–200°C）和出色的抗疲劳性（高达10 ⁹）。最重要的是，借助柔性云母基板和每个薄膜层的可弯曲性，全无机PZT铁电薄膜电容器可以安全地弯曲到2 mm的小弯曲半径，弯曲应变小于0.3％，进行10 ³次重复的弯曲-释放循环，其中极化没有明显降低，并且显示了10 ⁵ s的数据保留，并且在10 ^9时具有抗疲劳性切换周期。预计这项工作将提高高性能柔性铁电存储器在下一代可穿戴电子设备中的应用潜力。

更新日期：2019-10-10

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