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Ultralow Voltage Driving Circuits Based on Coplanar a‐InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-07-22 , DOI: 10.1002/aelm.201900359
Dayoon Lee 1 , Yongchan Kim 2 , So Young Kim 3 , Do Hwan Kim 3 , Hojin Lee 1, 2
Affiliation  

Coplanar amorphous indium gallium zinc oxide (a‐InGaZnO) thin film transistors (TFTs) with photopatternable ionic polymer gate dielectrics are fabricated and their inverter/shift register circuits are demonstrated. As a gate dielectric, ionic‐polyurethane acrylate (i‐PUA) can be patterned as small as 20 µm through conventional photolithography to achieve superior electrical properties at low operating voltages by the electric double layer formation, inducing ultrahigh channel capacitance. The fabricated solution‐processed a‐InGaZnO TFT with the i‐PUA gate dielectric shows excellent electrical characteristics such as a field‐effect mobility of 11.6 cm2 V−1 s−1, on–off ratio exceeding 107, and low threshold voltage of 0.3 V. It is also confirmed that the inverter and shift register can be fabricated based on the proposed coplanar a‐InGaZnO TFTs and are successfully functional even at 60 Hz operating frequency with driving voltage levels below 3 V.

中文翻译:

基于共平面a-InGaZnO TFT和可光图案化的离子聚合物栅极电介质的超低压驱动电路

制备了具有可光图案化的离子聚合物栅极电介质的共面非晶铟镓锌氧化物(a-InGaZnO)薄膜晶体管(TFT),并演示了其反相器/移位寄存器电路。作为栅极电介质,可以通过常规光刻将离子型聚氨酯丙烯酸酯(i-PUA)图案化为20 µm,从而通过双电层的形成在低工作电压下实现优异的电性能,从而产生超高的沟道电容。带有i-PUA栅极电介质的经过加工处理的a-InGaZnO TFT表现出出色的电特性,例如11.6 cm 2 V -1 s -1的场效应迁移率,通断比超过10 7,并且具有0.3 V的低阈值电压。还证实了可以基于所提出的共面a-InGaZnO TFT制造反相器和移位寄存器,并且即使在60 Hz的工作频率下且驱动电压低于3 V时也可以成功工作。
更新日期:2019-10-10
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