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Carrier Recombination and Diffusion in Wet-Cast Tin Iodide Perovskite Layers Under High Intensity Photoexcitation
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2019-07-31 , DOI: 10.1021/acs.jpcc.9b03226
Patrik Ščajev 1 , Ramu̅nas Aleksieju̅nas 1 , Paulius Baronas 1 , Džiugas Litvinas 1 , Marek Kolenda 1 , Chuanjiang Qin 2, 3 , Takashi Fujihara 4 , Toshinori Matsushima 2, 3, 5 , Chihaya Adachi 2, 3, 5 , Saulius Juršėnas 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2019-07-31 , DOI: 10.1021/acs.jpcc.9b03226
Patrik Ščajev 1 , Ramu̅nas Aleksieju̅nas 1 , Paulius Baronas 1 , Džiugas Litvinas 1 , Marek Kolenda 1 , Chuanjiang Qin 2, 3 , Takashi Fujihara 4 , Toshinori Matsushima 2, 3, 5 , Chihaya Adachi 2, 3, 5 , Saulius Juršėnas 1
Affiliation
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Tin iodide perovskite CH3NH3SnI3 is often considered as a replacement for toxic lead halide perovskites. Tin iodide is not only suitable for production of solar cells, but also it emits in the near-infrared spectral region, which is unique among the metal halide perovskites. On the downside, the CH3NH3SnI3 layers tend to be of high unintentional p-type doping, which significantly limits the solar cell efficiency. On the other hand, it is little known how this doping could affect other optical and electrical properties important for light-emitting applications. Here, we present an optical study of carrier diffusion and recombination pathways by time-resolved photoluminescence, differential transmission, and light induced transient grating techniques at excitations close to the lasing regime. We investigate several CH3NH3SnI3 layers formed by a solvent bathing method and using different antisolvents, causing different structural quality and doping level of the layers. We observe the amplified spontaneous emission with a threshold excitation as low as 5 μJ/cm2; however, the threshold is sensitive to structural quality and increases significantly in the layers with larger surface roughness. We present an all-optical method to determine the equilibrium density of holes, which varies in the range of 0.7–5.0 × 1018 cm–3, depending on the antisolvent used for production of a particular layer. Finally, we observe band-like diffusion of carriers with high values of ambipolar diffusion coefficient: it grows from 0.5 to 1.5 cm2/s with excitation due to carrier degeneracy. High diffusivity, large quantum yield even at low densities, and low stimulated emission threshold allow us to argue that unintentional p-type doping can be beneficial for light emitting applications.
中文翻译：
高强度光激发下湿法铸造碘化钙钛矿层中的载流子复合和扩散。
碘化锡钙钛矿CH 3 NH 3 SnI 3通常被认为是有毒的卤化铅钙钛矿的替代品。碘化锡不仅适合于太阳能电池的生产，而且还可以在近红外光谱区域发射，这在金属卤化物钙钛矿中是独特的。不利的一面是CH 3 NH 3 SnI 3层倾向于具有高的无意p型掺杂，这大大限制了太阳能电池的效率。另一方面，鲜为人知的是，这种掺杂如何影响发光应用中重要的其他光学和电学性质。在这里，我们通过时间分辨光致发光，差分透射和光激发瞬态光栅技术，在接近激射态的激发下，对载流子扩散和重组途径进行了光学研究。我们研究了几种通过溶剂浴法并使用不同的反溶剂形成的CH 3 NH 3 SnI 3层，从而导致这些层的结构质量和掺杂水平不同。我们观察到阈值激发低至5μJ/ cm时放大的自发发射2 ; 然而，该阈值对结构质量敏感，并且在具有较大表面粗糙度的层中显着增加。我们提出了一种全光学方法来确定孔的平衡密度，该密度在0.7–5.0×10 18 cm –3的范围内变化，具体取决于用于生产特定层的抗溶剂。最后，我们观察到带状扩散的载流子具有高的双极性扩散系数值：由于载流子简并性的激发，它从0.5 cm 2 / s增长到1.5 cm 2 / s。高扩散率，即使在低密度下也具有大量子产率以及低受激发射阈值使我们认为无意p型掺杂可能对发光应用有益。
更新日期：2019-08-01
中文翻译：
高强度光激发下湿法铸造碘化钙钛矿层中的载流子复合和扩散。
碘化锡钙钛矿CH 3 NH 3 SnI 3通常被认为是有毒的卤化铅钙钛矿的替代品。碘化锡不仅适合于太阳能电池的生产，而且还可以在近红外光谱区域发射，这在金属卤化物钙钛矿中是独特的。不利的一面是CH 3 NH 3 SnI 3层倾向于具有高的无意p型掺杂，这大大限制了太阳能电池的效率。另一方面，鲜为人知的是，这种掺杂如何影响发光应用中重要的其他光学和电学性质。在这里，我们通过时间分辨光致发光，差分透射和光激发瞬态光栅技术，在接近激射态的激发下，对载流子扩散和重组途径进行了光学研究。我们研究了几种通过溶剂浴法并使用不同的反溶剂形成的CH 3 NH 3 SnI 3层，从而导致这些层的结构质量和掺杂水平不同。我们观察到阈值激发低至5μJ/ cm时放大的自发发射2 ; 然而，该阈值对结构质量敏感，并且在具有较大表面粗糙度的层中显着增加。我们提出了一种全光学方法来确定孔的平衡密度，该密度在0.7–5.0×10 18 cm –3的范围内变化，具体取决于用于生产特定层的抗溶剂。最后，我们观察到带状扩散的载流子具有高的双极性扩散系数值：由于载流子简并性的激发，它从0.5 cm 2 / s增长到1.5 cm 2 / s。高扩散率，即使在低密度下也具有大量子产率以及低受激发射阈值使我们认为无意p型掺杂可能对发光应用有益。
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