Abstract The interfacial interactions between as-grown graphene (G) and its metal substrates play a crucial role in large-scale graphene transfer and governing anticorrosion properties. However, few studies have been conducted on quantifying the adhesion energy of as-grown graphene, especially, in systems such as nickel/graphene (Ni/G) with strong interfacial interactions. In this study, for the first time, a novel full-field three dimensional (3D) blister test via stereo-digital image correlation (StereoDIC) was developed to characterize the interfacial interaction between as-grown graphene on nickel (Ni) and copper (Cu) substrates, respectively. To minimize effects of surface roughness and residue stress on adhesion energy, the graphene growth processes on both Cu and Ni substrates were carefully controlled to assure nearly identical growth processes in terms of temperature, growth time, heating and cooling rates. The adhesion energy of as-grown graphene on Ni was measured to be 6.775 ± 0.556 J m − 2 , which is more than 7 times higher than that of as-grown graphene on Cu. Instead of van der Waals bonds, the Ni/G interface exhibited adhesion that is close to covalent bonding. We believe that this full-field 3D blister test could be further extended for evaluating strong interfacial interactions between graphene and other metal substrates.

中文翻译：

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通过基于 StereoDIC 的泡罩实验在镍基板上生长的石墨烯的粘附能

摘要 生长的石墨烯 (G) 与其金属基材之间的界面相互作用在大规模石墨烯转移和控制防腐性能中起着至关重要的作用。然而，关于量化生长石墨烯的粘附能的研究很少，特别是在具有强界面相互作用的镍/石墨烯 (Ni/G) 等系统中。在这项研究中，首次开发了一种通过立体数字图像相关 (StereoDIC) 的新型全场三维 (3D) 气泡测试，以表征镍 (Ni) 和铜上生长的石墨烯之间的界面相互作用。 Cu) 基板，分别。为了尽量减少表面粗糙度和残余应力对粘附能的影响，Cu 和 Ni 衬底上的石墨烯生长过程受到仔细控制，以确保在温度、生长时间、加热和冷却速率方面几乎相同的生长过程。测得在 Ni 上生长的石墨烯的粘附能为 6.775 ± 0.556 J m - 2 ，比在 Cu 上生长的石墨烯高 7 倍以上。Ni/G 界面不是范德华键，而是表现出接近共价键的粘附力。我们相信这种全场 3D 泡罩测试可以进一步扩展，以评估石墨烯和其他金属基材之间的强界面相互作用。Ni/G 界面不是范德华键，而是表现出接近共价键的粘附力。我们相信这种全场 3D 泡罩测试可以进一步扩展，以评估石墨烯和其他金属基材之间的强界面相互作用。Ni/G 界面不是范德华键，而是表现出接近共价键的粘附力。我们相信这种全场 3D 泡罩测试可以进一步扩展，以评估石墨烯和其他金属基材之间的强界面相互作用。