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Tailoring of Point Defects in Polycrystalline Indium Tin Oxide Films with Postirradiation of Electronegative Oxygen Ions
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-07-17 , DOI: 10.1021/acsaelm.9b00317 Yutaka Furubayashi 1 , Makoto Maehara 2 , Tetsuya Yamamoto 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-07-17 , DOI: 10.1021/acsaelm.9b00317 Yutaka Furubayashi 1 , Makoto Maehara 2 , Tetsuya Yamamoto 1
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We have developed a state-of-the-art technology to tailor oxygen-related point defects such as oxygen vacancies (VO) and structural defects of polycrystalline highly conductive Sn-doped In2O3 (ITO) films by a postirradiation of electronegative oxygen (O–) ions. The intentional oxygen doping that would annihilate VO decreases carrier density (ne) from 9.3 × 1020 to 7.1 × 1020 cm–3 with an increase of Hall mobility (μH) from 44 to 51 cm2·V−1·s−1, and subsequently, ne drastically decreases down to 1.2 × 1019 cm–3 together with a decrease in μH owing to a formation of Sn–O neutral complexes with a further increase in the amount of oxygen atoms that should fill the structural defects while retaining their crystal structure. Upon the filling of the structural vacancies, the successful control of intrinsic point defects is probably caused by almost no difference in the ionic radii between In3+ having six-coordination and Sn4+ having eight-coordination. The O–-ion-irradiation technology enables one to tailor the physical properties of ITO films over a wide range while retaining the crystal structure of the films.
中文翻译：
电负氧离子的后辐照量身定制多晶氧化铟锡薄膜中的点缺陷
我们已经开发出一种先进的技术，可以通过对负电性进行后辐照来定制与氧有关的点缺陷，例如氧空位（V O）和多晶高导电Sn掺杂In 2 O 3（ITO）膜的结构缺陷。氧（O –）离子。这将湮灭V中的有意的氧掺杂ö降低载流子密度（ñ ë）从9.3×10 20至7.1×10 20厘米-3的增加霍尔迁移率（μ的ħ至51厘米的44）2 ·V -1 · s -1，随后为n e急剧降低到1.2×10 19厘米-3连同在μ的减小ħ由于在氧原子应填充结构缺陷，同时保持其晶体结构的量的进一步增加地层的Sn-O中性络合物。在填充结构空位时，内点缺陷的成功控制可能是由具有六配位的In 3+和具有八配位的Sn 4+的离子半径几乎没有差异引起的。将O - -离子照射技术使得人们能够裁缝ITO膜的物理性质在宽范围内，同时保持薄膜的晶体结构。
更新日期：2019-07-18
中文翻译：
电负氧离子的后辐照量身定制多晶氧化铟锡薄膜中的点缺陷
我们已经开发出一种先进的技术，可以通过对负电性进行后辐照来定制与氧有关的点缺陷，例如氧空位（V O）和多晶高导电Sn掺杂In 2 O 3（ITO）膜的结构缺陷。氧（O –）离子。这将湮灭V中的有意的氧掺杂ö降低载流子密度（ñ ë）从9.3×10 20至7.1×10 20厘米-3的增加霍尔迁移率（μ的ħ至51厘米的44）2 ·V -1 · s -1，随后为n e急剧降低到1.2×10 19厘米-3连同在μ的减小ħ由于在氧原子应填充结构缺陷，同时保持其晶体结构的量的进一步增加地层的Sn-O中性络合物。在填充结构空位时，内点缺陷的成功控制可能是由具有六配位的In 3+和具有八配位的Sn 4+的离子半径几乎没有差异引起的。将O - -离子照射技术使得人们能够裁缝ITO膜的物理性质在宽范围内，同时保持薄膜的晶体结构。
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