Abstract In this work, we describe the efficiency of ultra-violet (UV) photodetector performance through RF magnetron sputtered TiO2/WO3 bi-layer thin films. The structural, chemical, morphological and photocurrent response properties of as-grown TiO2, WO3 and bi-layer TiO2/WO3 films were systematically studied. Herein, the merit of enhanced oxygen vacancies in the TiO2/WO3 bi-layer plays a crucial role in photoresponse which is due to the shift of W4f spectrum towards lower binding energy side. Consequently, the addition of WO3 layer on TiO2 might be responsible for the superior charge carrier generation when light is illuminated on bi-layer thin film. Besides, linear I-V characteristics of as-resulted samples confirm the ohmic-contact behaviour between the photodetector material and the electrode. The bi-layer of TiO2/WO3 sample generates more electrons and these are might be trapped at Fermi-level of the film surface and it causes for the suppression of the charge carriers recombination rate. As a result, by fine tuning of the bi-layer of TiO2/WO3 structure provides a promising UV photodetector performance than the single-layer of TiO2 and WO3.

中文翻译：

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双层 TiO2/WO3 溅射薄膜中增强的紫外光电探测器性能

摘要 在这项工作中，我们通过射频磁控溅射 TiO2/WO3 双层薄膜描述了紫外 (UV) 光电探测器性能的效率。系统地研究了生长的 TiO2、WO3 和双层 TiO2/WO3 薄膜的结构、化学、形态和光电流响应特性。在此，TiO2/WO3 双层中增强的氧空位的优点在光响应中起着至关重要的作用，这是由于 W4f 光谱向低结合能侧移动。因此，当光照射在双层薄膜上时，在 TiO2 上添加 WO3 层可能是产生优异的电荷载流子的原因。此外，所得样品的线性 IV 特性证实了光电探测器材料和电极之间的欧姆接触行为。TiO2/WO3 样品的双层会产生更多的电子，这些电子可能会被困在薄膜表面的费米能级上，从而抑制载流子复合率。因此，通过对双层 TiO2/WO3 结构进行微调，提供了比单层 TiO2 和 WO3 更有前途的紫外光电探测器性能。