Abstract We synthesize turbostratic graphene via negative carbon ion implantation on the top of 300 nm-thick LiNbO3 films and LiNbO3 bulks. Carbon ions were bombarded into LiNbO3 samples directly at 30 keV with fluences of (2−10) × 1015/cm2, followed by annealing at (500–700) °C to form sp2-bonded hexagon carbon structure. Raman spectroscopy was used to characterize the synthesized graphene with different ion implantation fluences and annealing temperatures. The morphology of graphene and its distribution were investigated by scanning electron microscopy and EDS mapping images. Direct C implantation to LiNbO3 provides a promising way for integrating graphene-LiNbO3 structure in microelectron devices.

中文翻译：

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通过在 LiNbO3 上直接注入碳离子合成乱层石墨烯

摘要 我们通过在 300 nm 厚的 LiNbO3 薄膜和 LiNbO3 块体顶部注入负碳离子来合成乱层石墨烯。碳离子以 30 keV 的能量直接轰击到 LiNbO3 样品中，能量密度为 (2−10) × 1015/cm2，然后在 (500–700) °C 下退火以形成 sp2 键合的六边形碳结构。拉曼光谱用于表征具有不同离子注入通量和退火温度的合成石墨烯。通过扫描电子显微镜和 EDS 映射图像研究了石墨烯的形貌及其分布。直接向 LiNbO3 注入 C 为将石墨烯-LiNbO3 结构集成到微电子器件中提供了一种有前景的方法。