Nonlinear Optical Signatures of the Transition from Semiconductor to Semimetal in PtSe2,Laser & Photonics Reviews

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Nonlinear Optical Signatures of the Transition from Semiconductor to Semimetal in PtSe2
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2019-07-08 , DOI: 10.1002/lpor.201900052
Lei Wang _{1,

2,

3} , Saifeng Zhang _{1,

2,

3} , Niall McEvoy ₄ , Yi‐yang Sun ₅ , Jiawei Huang _{1,

2,

3} , Yafeng Xie _{1,

2,

3} , Ningning Dong _{1,

3} , Xiaoyan Zhang _{1,

3} , Ivan M. Kislyakov ₁ , Jean‐Michel Nunzi _{1,

6} , Long Zhang _{1,

3} , Jun Wang _{1,

2,

3,

7}

Affiliation

The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1–2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra‐broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, PtSe₂ shows much better air stability than its analogue, black phosphorous. In this work, the superior nonlinear optical performance and ultrafast dynamics of layered PtSe₂, and signatures of the transition from semiconductor to semimetal are systematically studied. Combining with rate equations, first‐principles calculation, and electrical measurements, a comprehensive understanding about the evolution of nonlinear absorption and carrier dynamics with increasing layer thickness is provided, indicating its promising potential in nanophotonic devices such as infrared detectors, optical switches, and saturable absorbers.

中文翻译：

PtSe2中从半导体过渡到半金属的非线性光学特征

自从石墨烯，过渡金属二卤化物和黑磷出现以来，对能带隙可调范围为零至至少1-2 eV的超宽带光学材料的需求一直是探索新型2D材料的动力之一。作为能带隙范围为0至1.2 eV的超宽带2D材料，PtSe _2的空气稳定性比其模拟黑磷好得多。在这项工作中，层状PtSe ₂具有出众的非线性光学性能和超快动力学，并系统地研究了从半导体到半金属的过渡特征。结合速率方程，第一性原理计算和电学测量，提供了关于非线性吸收和载流子动力学随层厚度增加的演变的全面理解，表明其在纳米光子器件（如红外探测器，光开关和可饱和器件）中的潜力很大吸收体。

更新日期：2019-07-08

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