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Boosting the Curie Temperature of Two-Dimensional Semiconducting CrI3 Monolayer through van der Waals Heterostructures
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2019-07-12 , DOI: 10.1021/acs.jpcc.9b04631 Shanbao Chen 1, 2 , Chengxi Huang 1, 2 , Huasheng Sun 1 , Junfei Ding 1 , Puru Jena 2 , Erjun Kan 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2019-07-12 , DOI: 10.1021/acs.jpcc.9b04631 Shanbao Chen 1, 2 , Chengxi Huang 1, 2 , Huasheng Sun 1 , Junfei Ding 1 , Puru Jena 2 , Erjun Kan 1
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The integration of ferromagnetic and semiconducting properties in a single two-dimensional (2D) material has been recognized as a fertile ground for fundamental science as well as for practical applications in information processing and storage. CrI3 monolayer has recently drawn much attention due to its 2D long-range ferromagnetic (FM) order. However, its Curie temperature (TC) is too low (∼45 K) for practical spintronic applications. Here, we show that the in-plane FM coupling of CrI3 can be remarkably enhanced by constructing a 2D heterostructure where CrI3 monolayer is supported on a nonmagnetic normal semiconductor/insulator substrate. Choosing MoTe2 monolayer as a substrate, we find that the CrI3/MoTe2 2D heterostructure is an intrinsic semiconducting ferromagnet with TC of ∼60 K. The TC can be further increased to ∼85 K by applying an out-of-plane pressure of ∼4.2 GPa. The doubling of the TC in this 2D heterostructure comes from the introduction of extra spin superexchange (Cr–Te–Cr) paths. Our findings provide a promising pathway to improve ferromagnetism in 2D semiconductors, which can stimulate further theoretical and experimental interest.
中文翻译：
通过范德华异质结构提高二维CrI3半导体单层的居里温度
在单个二维（2D）材料中集成铁磁和半导体特性已被认为是基础科学以及信息处理和存储中的实际应用的沃土。CrI 3单层由于其2D远距离铁磁（FM）顺序最近引起了很多关注。但是，对于实际的自旋电子应用，其居里温度（T C）太低（〜45 K）。在这里，我们表明，通过构建2D异质结构可以显着增强CrI 3的平面内FM耦合，其中CrI 3单层被支撑在非磁性普通半导体/绝缘体衬底上。选择MoTe 2以单层为基底，我们发现CrI 3 / MoTe 2 2D异质结构是本征半导体铁磁体，其T C为〜60K。通过施加面外压力T C可以将T C进一步提高到〜85K。约4.2 GPa。所述的倍增Ť Ç在这个2D异质来自引入的额外的自旋超交换（CR-Te类Cr）的路径。我们的发现为改善2D半导体中的铁磁性提供了一条有希望的途径，这可以激发进一步的理论和实验兴趣。
更新日期：2019-07-13
中文翻译：
通过范德华异质结构提高二维CrI3半导体单层的居里温度
在单个二维（2D）材料中集成铁磁和半导体特性已被认为是基础科学以及信息处理和存储中的实际应用的沃土。CrI 3单层由于其2D远距离铁磁（FM）顺序最近引起了很多关注。但是，对于实际的自旋电子应用，其居里温度（T C）太低（〜45 K）。在这里，我们表明，通过构建2D异质结构可以显着增强CrI 3的平面内FM耦合，其中CrI 3单层被支撑在非磁性普通半导体/绝缘体衬底上。选择MoTe 2以单层为基底，我们发现CrI 3 / MoTe 2 2D异质结构是本征半导体铁磁体，其T C为〜60K。通过施加面外压力T C可以将T C进一步提高到〜85K。约4.2 GPa。所述的倍增Ť Ç在这个2D异质来自引入的额外的自旋超交换（CR-Te类Cr）的路径。我们的发现为改善2D半导体中的铁磁性提供了一条有希望的途径，这可以激发进一步的理论和实验兴趣。
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